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TS5A22364-Q1 Scheda tecnica(PDF) 5 Page - Texas Instruments

Il numero della parte TS5A22364-Q1
Spiegazioni elettronici  0.65- Dual SPDT Analog Switch with Negative Signaling Capability
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Produttore elettronici  TI1 [Texas Instruments]
Homepage  http://www.ti.com
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TS5A22364-Q1
www.ti.com
SCDS361A – OCTOBER 2014 – REVISED JULY 2016
Product Folder Links: TS5A22364-Q1
Submit Documentation Feedback
Copyright © 2014–2016, Texas Instruments Incorporated
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
(2)
The package thermal impedance is calculated in accordance with JESD 51-7.
6.4 Thermal Information
THERMAL METRIC(1) (2)
TS5A22364-Q1
UNIT
DGS (VSSOP)
10 PINS
RθJA
Junction-to-ambient thermal resistance
163.3
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
56.4
°C/W
RθJB
Junction-to-board thermal resistance
83.1
°C/W
ψJT
Junction-to-top characterization parameter
6.8
°C/W
ψJB
Junction-to-board characterization parameter
81.8
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
°C/W
(1)
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
(2)
All unused digital inputs of the device must be held at VCC or GND to ensure proper device operation. See the Implications of Slow or
Floating CMOS Inputs application report, SCBA004.
6.5 Electrical Characteristics—2.5-V Supply
VCC = 2.3 V to 2.7 V, TA = –40°C to +125°C (unless otherwise noted)
(1)
PARAMETER
TEST CONDITIONS
TA
VCC
MIN
TYP
MAX
UNIT
ANALOG SWITCH
Analog signal
VCOM
VNO
VNC
VCC
5.5
VCC
V
On-state
resistance
Ron
VNC or VNO = VCC, 1.5 V,
VCC – 5.5 V
ICOM = –100 mA
COM to NO or NC,
See Figure 14
25°C
2.7 V
0.65
0.94
–40°C to +125°C
1.3
On-state
resistance match
between channels
ΔRon
VNC or VNO = 1.5 V,
ICOM = –100 mA
COM to NO or NC,
See Figure 14
25°C
2.7 V
0.023
0.11
–40°C to +125°C
0.15
On-state
resistance
flatness
Ron(flat)
VNC or VNO = VCC, 1.5 V,
VCC – 5.5 V
ICOM = –100 mA
COM to NO or NC,
See Figure 14
25°C
2.7 V
0.18
0.46
–40°C to +125°C
0.56
Shunt switch
resistance
RSH
INO or INC = 10 mA
–40°C to +125°C
2.7 V
25
55
On-state leakage
current
ICOM(ON)
VNC and VNO = floating,
VCOM = VCC , VCC – 5.5 V
See Figure 16
25°C
2.7 V
–200
200
nA
–40°C to +125°C
–2500
2500
DIGITAL CONTROL INPUTS (IN)(2)
Input logic high
VIH
–40°C to +125°C
1.4
VCC
V
Input logic low
VIL
–40°C to +125°C
0.4
V
Input leakage
current
IIH, IIL
VIN = VCC or 0
25°C
2.7 V
–250
250
nA
–40°C to +125°C
–250
250
DYNAMIC
Turnon time
tON
VCOM = VCC,
RL = 300 Ω
CL = 35 pF,
See Figure 18
25°C
2.5 V
44
80
ns
–40°C to +125°C
2.3 V to
2.7 V
120
Turnoff time
tOFF
VCOM = VCC,
RL = 300 Ω
CL = 35 pF,
See Figure 18
25°C
2.5 V
22
70
ns
–40°C to +125°C
2.3 V to
2.7 V
70
Break-before-make
time
tBBM
See Figure 19
25°C
2.5 V
1
7
ns
Charge injection
QC
VGEN = 0,
RGEN = 0,
CL = 1 nF,
See Figure 23
25°C
2.5 V
215
pC
On-State
NC, NO, COM
capacitance
CCOM(ON)
VCOM = VCC or GND,
Switch ON, f = 10 MHz
See Figure 17
25°C
2.5 V
370
pF
Digital input
capacitance
CI
VIN = VCC or GND
See Figure 17
25°C
2.5 V
2.6
pF
Bandwidth
BW
RL = 50 Ω, –3 dB
See Figure 20
25°C
2.5 V
17
MHz


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