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LM118H Scheda tecnica(PDF) 2 Page - National Semiconductor (TI) |
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LM118H Scheda tecnica(HTML) 2 Page - National Semiconductor (TI) |
2 / 18 page Absolute Maximum Ratings (Note 7) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage ±20V Power Dissipation (Note 2) 500 mW Differential Input Current (Note 3) ±10 mA Input Voltage (Note 4) ±15V Output Short-Circuit Duration Continuous Operating Temperature Range LM118 −55˚C to +125˚C LM218 −25˚C to +85˚C LM318 0˚C to +70˚C Storage Temperature Range −65˚C to +150˚C Lead Temperature (Soldering, 10 sec.) Hermetic Package 300˚C Plastic Package 260˚C Soldering Information Dual-In-Line Package Soldering (10 sec.) 260˚C Small Outline Package Vapor Phase (60 sec.) 215˚C Infrared (15 sec.) 220˚C See AN-450 “Surface Mounting Methods and Their Effect on Product Reliability” for other methods of soldering surface mount devices. ESD Tolerance (Note 8) 2000V Electrical Characteristics (Note 5) Parameter Conditions LM118/LM218 LM318 Units Min Typ Max Min Typ Max Input Offset Voltage T A = 25˚C 2 4 4 10 mV Input Offset Current T A = 25˚C 6 50 30 200 nA Input Bias Current T A = 25˚C 120 250 150 500 nA Input Resistance T A = 25˚C 1 3 0.5 3 M Ω Supply Current T A = 25˚C 5 8 5 10 mA Large Signal Voltage Gain T A = 25˚C, VS = ±15V 50 200 25 200 V/mV V OUT = ±10V, RL ≥ 2kΩ Slew Rate T A = 25˚C, VS = ±15V, AV = 1 50 70 50 70 V/µs (Note 6) Small Signal Bandwidth T A = 25˚C, VS = ±15V 15 15 MHz Input Offset Voltage 615 mV Input Offset Current 100 300 nA Input Bias Current 500 750 nA Supply Current T A = 125˚C 4.5 7 mA Large Signal Voltage Gain V S = ±15V, VOUT = ±10V 25 20 V/mV R L ≥ 2kΩ Output Voltage Swing V S = ±15V, RL =2k Ω ±12 ±13 ±12 ±13 V Input Voltage Range V S = ±15V ±11.5 ±11.5 V Common-Mode Rejection Ratio 80 100 70 100 dB Supply Voltage Rejection Ratio 70 80 65 80 dB Note 2: The maximum junction temperature of the LM118 is 150˚C, the LM218 is 110˚C, and the LM318 is 110˚C. For operating at elevated temperatures, devices in the H08 package must be derated based on a thermal resistance of 160˚C/W, junction to ambient, or 20˚C/W, junction to case. The thermal resistance of the dual-in-line package is 100˚C/W, junction to ambient. Note 3: The inputs are shunted with back-to-back diodes for overvoltage protection. Therefore, excessive current will flow if a differential input voltage in excess of 1V is applied between the inputs unless some limiting resistance is used. Note 4: For supply voltages less than ±15V, the absolute maximum input voltage is equal to the supply voltage. Note 5: These specifications apply for ±5V ≤ VS ≤ ±20V and −55˚C ≤ TA ≤ +125˚C (LM118), −25˚C ≤ TA ≤ +85˚C (LM218), and 0˚C ≤ TA ≤ +70˚C (LM318). Also, power supplies must be bypassed with 0.1 µF disc capacitors. Note 6: Slew rate is tested with VS = ±15V. The LM118 is in a unity-gain non-inverting configuration. VIN is stepped from −7.5V to +7.5V and vice versa. The slew rates between −5.0V and +5.0V and vice versa are tested and guaranteed to exceed 50V/µs. Note 7: Refer to RETS118X for LM118H and LM118J military specifications. Note 8: Human body model, 1.5 k Ω in series with 100 pF. www.national.com 2 |
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