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CSD17581Q3A Scheda tecnica(PDF) 3 Page - Texas Instruments

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Il numero della parte CSD17581Q3A
Spiegazioni elettronici  30-V N-Channel NexFET Power MOSFETs
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Produttore elettronici  TI1 [Texas Instruments]
Homepage  http://www.ti.com
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CSD17581Q3A
www.ti.com
SLPS629 – OCTOBER 2016
Product Folder Links: CSD17581Q3A
Submit Documentation Feedback
Copyright © 2016, Texas Instruments Incorporated
5 Specifications
5.1 Electrical Characteristics
TA = 25°C (unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
STATIC CHARACTERISTICS
BVDSS
Drain-to-source voltage
VGS = 0 V, ID = 250 μA
30
V
IDSS
Drain-to-source leakage current
VGS = 0 V, VDS = 24 V
1
μA
IGSS
Gate-to-source leakage current
VDS = 0 V, VGS = 20 V
100
nA
VGS(th)
Gate-to-source threshold voltage
VDS = VGS, ID = 250 μA
1.0
1.3
1.7
V
RDS(on)
Drain-to-source
On-resistance
VGS = 4.5 V, ID = 16 A
3.9
4.7
m
VGS = 10 V, ID = 16 A
3.2
3.8
gfs
Transconductance
VDS = 3 V, ID = 16 A
78
S
DYNAMIC CHARACTERISTICS
Ciss
Input capacitance
VGS = 0 V, VDS = 15 V, ƒ = 1 MHz
2800
3640
pF
Coss
Output capacitance
342
445
pF
Crss
Reverse transfer capacitance
150
195
pF
RG
Series gate resistance
1.8
3.6
Qg
Gate charge total (4.5 V)
VDS = 15 V, ID = 16 A
20
25
nC
Qg
Gate charge total (10 V)
41
54
nC
Qgd
Gate charge gate-to-drain
4.0
nC
Qgs
Gate charge gate-to-source
6.9
nC
Qg(th)
Gate charge at Vth
3.6
nC
Qoss
Output charge
VDS = 15 V, VGS = 0 V
11.7
nC
td(on)
Turnon delay time
VDS = 15 V, VGS = 10 V,
IDS = 16 A, RG = 0 Ω
12
ns
tr
Rise time
23
ns
td(off)
Turnoff delay time
23
ns
tf
Fall time
10
ns
DIODE CHARACTERISTICS
VSD
Diode forward voltage
ISD = 16 A, VGS = 0 V
0.8
1.0
V
Qrr
Reverse recovery charge
VDS= 15 V, IF = 16 A,
di/dt = 300 A/μs
10.2
nC
trr
Reverse recovery time
9.8
ns
(1)
RθJC is determined with the device mounted on a 1-in
2 (6.45-cm2), 2-oz (0.071-mm) thick Cu pad on a 1.5-in × 1.5-in
(3.81-cm × 3.81-cm), 0.06-in (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board
design.
(2)
Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu.
5.2 Thermal Information
TA = 25°C (unless otherwise stated)
THERMAL METRIC
MIN
TYP
MAX
UNIT
RθJC
Junction-to-case thermal resistance(1)
2
°C/W
RθJA
Junction-to-ambient thermal resistance(1)(2)
55


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