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CSD17581Q3A Scheda tecnica(PDF) 3 Page - Texas Instruments |
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CSD17581Q3A Scheda tecnica(HTML) 3 Page - Texas Instruments |
3 / 13 page 3 CSD17581Q3A www.ti.com SLPS629 – OCTOBER 2016 Product Folder Links: CSD17581Q3A Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated 5 Specifications 5.1 Electrical Characteristics TA = 25°C (unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA 30 V IDSS Drain-to-source leakage current VGS = 0 V, VDS = 24 V 1 μA IGSS Gate-to-source leakage current VDS = 0 V, VGS = 20 V 100 nA VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA 1.0 1.3 1.7 V RDS(on) Drain-to-source On-resistance VGS = 4.5 V, ID = 16 A 3.9 4.7 m Ω VGS = 10 V, ID = 16 A 3.2 3.8 gfs Transconductance VDS = 3 V, ID = 16 A 78 S DYNAMIC CHARACTERISTICS Ciss Input capacitance VGS = 0 V, VDS = 15 V, ƒ = 1 MHz 2800 3640 pF Coss Output capacitance 342 445 pF Crss Reverse transfer capacitance 150 195 pF RG Series gate resistance 1.8 3.6 Ω Qg Gate charge total (4.5 V) VDS = 15 V, ID = 16 A 20 25 nC Qg Gate charge total (10 V) 41 54 nC Qgd Gate charge gate-to-drain 4.0 nC Qgs Gate charge gate-to-source 6.9 nC Qg(th) Gate charge at Vth 3.6 nC Qoss Output charge VDS = 15 V, VGS = 0 V 11.7 nC td(on) Turnon delay time VDS = 15 V, VGS = 10 V, IDS = 16 A, RG = 0 Ω 12 ns tr Rise time 23 ns td(off) Turnoff delay time 23 ns tf Fall time 10 ns DIODE CHARACTERISTICS VSD Diode forward voltage ISD = 16 A, VGS = 0 V 0.8 1.0 V Qrr Reverse recovery charge VDS= 15 V, IF = 16 A, di/dt = 300 A/μs 10.2 nC trr Reverse recovery time 9.8 ns (1) RθJC is determined with the device mounted on a 1-in 2 (6.45-cm2), 2-oz (0.071-mm) thick Cu pad on a 1.5-in × 1.5-in (3.81-cm × 3.81-cm), 0.06-in (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design. (2) Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu. 5.2 Thermal Information TA = 25°C (unless otherwise stated) THERMAL METRIC MIN TYP MAX UNIT RθJC Junction-to-case thermal resistance(1) 2 °C/W RθJA Junction-to-ambient thermal resistance(1)(2) 55 |
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