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LB1948MC-BH Scheda tecnica(PDF) 2 Page - ON Semiconductor |
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LB1948MC-BH Scheda tecnica(HTML) 2 Page - ON Semiconductor |
2 / 8 page LB1948MC www.onsemi.com 2 Specifications Absolute Maximum Ratings at Ta = 25 C (Note 1) Parameter Symbol Conditions Ratings Unit Maximum supply voltage VCC max -0.3 to +20 V Output voltage VOUT -0.3 to +20 V Input voltage VIN -0.3 to +18 V Ground pin source current IGND Per channel 800 mA Allowable power dissipation Pd max Mounted on a specified board (Note 2) 870 mW Operating temperature Topr -20 to +85 C Storage temperature Tstg -40 to +150 C 1.Stresses exceeding those listed in the Maximum Rating table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2. Specified board: 114.3mm x 76.1mm x 1.6mm, glass epoxy board Recommendation Operating Condition at Ta = 25 C (Note 3) Parameter Symbol Conditions Ratings Unit Supply voltage VCC 2.5 to 16 V Input high-level voltage VIH 1.8 to 10 V Input low-level voltage VIL -0.3 to +0.7 V 3. Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. Electrical Characteristics at Ta 25C, VCC = 12V (Note 4) Parameter Symbol Conditions Ratings Unit min typ max Current drain ICC0 IN1, 2, 3, 4 = 0V (Standby mode) 0.1 10 A ICC1 (Note 5) (Forward or reverse mode) 15 21 mA ICC2 (Note 6) (Brake mode) 30 40 mA Output saturation voltage VO(sat)1 IOUT = 200mA (High Side and Low Side) 0.25 0.35 V VO(sat)2 IOUT = 400mA (High Side and Low Side) 0.50 0.75 V Input current IIN VIN = 5V 85 110 A Spark Killer Diode Reverse current IS(leak) 30 A Forward voltage VSF IOUT = 400mA 1.7 V 4. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. IN1/IN2/IN3/IN4=H/L/L/L or L/H/L/L or L/L/H/L or L/L/L/H. 6. IN1/IN2/IN3/IN4=H/H/L/L or L/L/H/H. |
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