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LF444ACN Scheda tecnica(PDF) 3 Page - National Semiconductor (TI) |
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LF444ACN Scheda tecnica(HTML) 3 Page - National Semiconductor (TI) |
3 / 10 page AC Electrical Characteristics (Note 5) Symbol Parameter Conditions LF444A LF444 Units Min Typ Max Min Typ Max Amplifier-to-Amplifier −120 −120 dB Coupling SR Slew Rate V S = ±15V, TA = 25˚C 1 1 V/µs GBW Gain-Bandwidth Product V S = ±15V, TA = 25˚C 1 1 MHz e n Equivalent Input Noise Voltage T A = 25˚C, RS = 100Ω, 35 35 f = 1 kHz i n Equivalent Input Noise Current T A = 25˚C, f = 1 kHz 0.01 0.01 Note 1: Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage. Note 2: Any of the amplifier outputs can be shorted to ground indefinitely, however, more than one should not be simultaneously shorted as the maximum junction temperature will be exceeded. Note 3: For operating at elevated temperature, these devices must be derated based on a thermal resistance of θjA. Note 4: The LF444A is available in both the commercial temperature range 0˚C ≤ TA ≤ 70˚C and the military temperature range −55˚C ≤ TA ≤ 125˚C. The LF444 is available in the commercial temperature range only. The temperature range is designated by the position just before the package type in the device number. A “C” indicates the commercial temperature range and an “M” indicates the military temperature range. The military temperature range is available in “D” package only. Note 5: Unless otherwise specified the specifications apply over the full temperature range and for VS = ±20V for the LF444A and for VS = ±15V for the LF444. VOS, IB, and IOS are measured at VCM = 0. Note 6: The input bias currents are junction leakage currents which approximately double for every 10˚C increase in the junction temperature, Tj. Due to limited pro- duction test time, the input bias currents measured are correlated to junction temperature. In normal operation the junction temperature rises above the ambient tem- perature as a result of internal power dissipation, PD.Tj = TA + θjAPD where θjA is the thermal resistance from junction to ambient. Use of a heat sink is recommended if input bias current is to be kept to a minimum. Note 7: Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice from ±15V to ±5V for the LF444 and from ±20V to ±5V for the LF444A. Note 8: Refer to RETS444X for LF444MD military specifications. Note 9: Max. Power Dissipation is defined by the package characteristics. Operating the part near the Max. Power Dissipation may cause the part to operate outside guaranteed limits. Note 10: Human body model, 1.5 k Ω in series with 100 pF. Note 11: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating ratings indicate conditions for which the device is func- tional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which guar- antee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit is given, however, the typical value is a good indication of device performance. Typical Performance Characteristics Input Bias Current DS009156-12 Input Bias Current DS009156-13 Supply Current DS009156-14 www.national.com 3 |
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