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LM10 Scheda tecnica(PDF) 2 Page - National Semiconductor (TI) |
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LM10 Scheda tecnica(HTML) 2 Page - National Semiconductor (TI) |
2 / 21 page Absolute Maximum Ratings (Notes 1, 8) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. LM10/LM10B/ LM10BL/ LM10C LM10CL Total Supply Voltage 45V 7V Differential Input Voltage (Note 2) ±40V ±7V Power Dissipation (Note 3) internally limited Output Short-circuit Duration (Note 4) continuous Storage-Temp. Range −55˚C to +150˚C Lead Temp. (Soldering, 10 seconds) Metal Can 300˚C Lead Temp. (Soldering, 10 seconds) DIP 260˚C Vapor Phase (60 seconds) 215˚C Infrared (15 seconds) 220˚C See AN-450 “Surface Mounting Methods and Their Effect on Product Reliability” for other methods of soldering surface mount devices. ESD rating is to be determined. Maximum Junction Temperature LM10 150˚C LM10B 100˚C LM10C 85˚C Operating Ratings Package Thermal Resistance θ JA H Package 150˚C/W N Package 87˚C/W WM Package 90˚C/W θ JC H Package 45˚C/W Electrical Characteristics T J=25˚C, TMIN≤TJ≤TMAX (Boldface type refers to limits over temperature range) (Note 5) Parameter Conditions LM10/LM10B LM10C Units Min Typ Max Min Typ Max Input offset voltage 0.3 2.0 0.5 4.0 mV 3.0 5.0 mV Input offset current 0.25 0.7 0.4 2.0 nA (Note 6) 1.5 3.0 nA Input bias current 10 20 12 30 nA 30 40 nA Input resistance 250 500 150 400 k Ω 150 115 k Ω Large signal voltage V S= ±20V, IOUT=0 120 400 80 400 V/mV gain V OUT= ±19.95V 80 50 V/mV V S= ±20V, VOUT= ±19.4V 50 130 25 130 V/mV I OUT= ±20 mA (±15 mA) 20 15 V/mV V S= ±0.6V (0.65V), IOUT= ±2 mA 1.5 3.0 1.0 3.0 V/mV V OUT= ±0.4V (±0.3V), VCM=−0.4V 0.5 0.75 V/mV Shunt gain (Note 7) 1.2V (1.3V) ≤V OUT≤40V, 14 33 10 33 V/mV R L=1.1 kΩ 0.1 mA ≤I OUT≤5mA 66 V/mV 1.5V ≤V+≤40V, R L=250Ω 8 25 6 25 V/mV 0.1 mA ≤I OUT≤20 mA 44 V/mV Common-mode −20V ≤V CM≤19.15V (19V) 93 102 90 102 dB rejection V S= ±20V 87 87 dB Supply-voltage −0.2V ≥V−≥−39V 90 96 87 96 dB rejection V +=1.0V (1.1V) 84 84 dB 1.0V (1.1V) ≤V+≤39.8V 96 106 93 106 dB V −=−0.2V 90 90 dB Offset voltage drift 2.0 5.0 µV/˚C Offset current drift 2.0 5.0 pA/˚C Bias current drift T C<100˚C 60 90 pA/˚C Line regulation 1.2V (1.3V) ≤V S≤40V 0.001 0.003 0.001 0.008 %/V 0 ≤I REF≤1.0 mA, VREF=200 mV 0.006 0.01 %/V www.national.com 2 |
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