SI8402DB-T1 datasheet(4/6 Pages) VISHAY

Il numero della parte	SI8402DB-T1

Spiegazioni elettronici	20-V N-Channel 1.8-V (G-S) MOSFET

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Si8402DB

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Document Number: 72657

S-32557—Rev. A, 15-Dec-03

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

10−3

10−2

1

10

600

10−1

10−4

100

0.001

0

40

80

60

10

Single Pulse Power, Juncion-to-Ambient

Time (sec)

20

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Normalized Thermal Transient Impedance, Junction-to-Ambient

Square Wave Pulse Duration (sec)

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 72_C/W

3. TJM − TA = PDMZthJA(t)

t1

t2

t1

t2

Notes:

4. Surface Mounted

PDM

0.01

0.1

1

−0.4

−0.3

−0.2

−0.1

−0.0

0.1

0.2

−50

−25

0

25

50

75

100

125

150

ID = 250 mA

Threshold Voltage

TJ − Temperature (_C)

Safe Operating Area

VDS − Drain-to-Source Voltage (V)

100

1

0.1

1

10

100

0.01

10

TA = 25_C

Single Pulse

P(t) = 10

dc

0.1

ID(on)

Limited

rDS(on) Limited

BVDSS Limited

P(t) = 1

P(t) = 0.1

P(t) = 0.01

P(t) = 0.001

IDM Limited

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