SI4812DY-T1 datasheet(2/5 Pages) VISHAY

Il numero della parte	SI4812DY-T1

Spiegazioni elettronici	N-Channel 30-V (D-S) MOSFET with Schottky Diode

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Si4812DY

Vishay Siliconix

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Document Number: 71775

S-41426—Rev. G, 26-Jul-04

MOSFET + SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

1

3

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

VDS = 30 V, VGS = 0 V

0.004

0.100

Zero Gate Voltage Drain Current

(MOSFET + Schottky)

IDSS

VDS = 30 V, VGS = 0 V, TJ = 100_C

0.7

10

mA

(MOSFET + Schottky)

DSS

VDS = 30 V, VGS = 0 V, TJ = 125_C

3.0

20

On-State Drain Currenta

ID(on)

VDS w 5 V, VGS = 10 V

20

A

Drain Source On State Resistancea

r

VGS = 10 V, ID = 9 A

0.012

0.018

W

Drain-Source On-State Resistancea

rDS(on)

VGS = 4.5 V, ID = 7.3 A

0.019

0.028

W

Forward Transconductancea

gfs

VDS = 15 V, ID = 9 A

23

S

Schottky Diode Forward Voltagea

VSD

IS = 1.0 A, VGS = 0 V

0.45

0.50

V

Schottky Diode Forward Voltagea

VSD

IS = 1.0 A, VGS = 0 V, TJ = 125_C

0.33

0.42

V

Dynamicb

Total Gate Charge

Qg

13

24

Gate-Source Charge

Qgs

VDS = 15 V, VGS = 5 V, ID = 9 A

4

nC

Gate-Drain Charge

Qgd

5.7

Gate Resistance

Rg

0.2

2.4

W

Turn-On Delay Time

td(on)

16

25

Rise Time

tr

VDD = 15 V, RL = 15 W

10

20

Turn-Off Delay Time

td(off)

VDD = 15 V, RL = 15 W

ID ^ 1 A, VGEN = 10 V, Rg = 6 W

35

50

ns

Fall Time

tf

13

20

Source-Drain Reverse Recovery Time

trr

IF = 1.0 A, di/dt = 100 A/ms

35

70

Notes

a.

Pulse test; pulse width v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

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