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SI3911DV Scheda tecnica(PDF) 3 Page - Vishay Siliconix |
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SI3911DV Scheda tecnica(HTML) 3 Page - Vishay Siliconix |
3 / 4 page Si3911DV Vishay Siliconix New Product Document Number: 71380 S-20275—Rev. B, 18-Mar-02 www.vishay.com 3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.00 0.15 0.30 0.45 0.60 0.75 02 46 8 0 100 200 300 400 500 600 0 4 8 12 16 20 On-Resistance vs. Drain Current VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) Capacitance VGS = 1.8 V VGS = 4.5 V Coss Ciss VGS = 2.5 V Crss 1.2 1.5 0.1 1 10 0.00 0.3 0.6 0.9 TJ = 25_C TJ = 150_C Source-Drain Diode Forward Voltage VSD – Source-to-Drain Voltage (V) 0.0 0.1 0.2 0.3 0.4 0.5 012345 VGS – Gate-to-Source Voltage (V) 0 1 2 3 4 5 012345 0.6 0.8 1.0 1.2 1.4 1.6 1.8 –50 –25 0 25 50 75 100 125 150 Gate Charge Qg – Total Gate Charge (nC) On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 2.2 A TJ – Junction Temperature (_C) On-Resistance vs. Gate-to-Source Voltage VDS = 10 V ID = 2.2 A ID = 2.2 A |
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