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2SC1623 Scheda tecnica(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

Il numero della parte 2SC1623
Spiegazioni elettronici  Plastic-Encapsulate Transistors
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Produttore elettronici  HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]
Homepage  http://www.hottech.net.cn/
Logo HOTTECH - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

2SC1623 Scheda tecnica(HTML) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

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Plastic-Encapsulate Transistors
GUANGDONG
HOTTECH
INDUSTRIAL
CO,. LTD.
FEATURES
High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA
High voltage:VCEO=50V
MAXIMUM RATINGS (TA=25
unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
50
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current -Continuous
I
C
0.1
A
Collector Power Dissipation
PC
0.2
W
Junction Temperature
T
J
150
Storage Temperature
Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
VCBO
IC=100μA,IE=0
60
V
Collector-emitter breakdown voltage
VCEO
IC=1mA,IB=0
50
V
Emitter-base breakdown voltage
VEBO
IE=100μA,IC=0
5
V
Collector cut-off current
ICBO
VCB=60V,IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
0.1
μA
DC current gain
hFE
VCE=6V,IC=1mA
90
200
600
Collector-emitter saturation voltage
VCE(sat)
IC=100mA,IB=10mA
0.3
V
Base-emitter saturation voltage
VBE(sat)
IC=100mA,IB=10mA
1
V
Transition frequency
fT
VCE=6V,IC=10mA
250
MHz
CLASSIFICATIONOF
hFE
Rank
L4
L5
L6
L7
Range
90-180
135-270
200-400
300-600
(NPN)
1. BASE
2. EMITTER
SOT-23
3. COLLECTO
2SC1623


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