BC818-40 datasheet(1/2 Pages) HOTTECH

Il numero della parte	BC818-40

Spiegazioni elettronici	Plastic-Encapsulate Transistors

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Produttore elettronici	HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]

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Plastic-Encapsulate Transistors

GUANGDONG

HOTTECH

INDUSTRIAL

CO,. LTD.

FEATURES

For general AF applications

High collector current

High current gain

Low collector-emitter saturation voltage

Marking

BC818-16

BC818-25

BC818-40

6E

6F

6G

MAXIMUM RATINGS (TA=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

30

V

DCollector-Emitter Voltage

V

CEO

25

V

Emitter-Base Voltage

V

EBO

5

V

Collector Current -Continuous

I

C

500

mA

Collector Power Dissipation

PC

300

mW

Junction Temperature

T

J

150

Storage Temperature

Tstg

-55 to +150

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Max

Unit

Collector-base breakdown voltage

VCB

O

IC= 10μA, IE=0

30

V

Collector-emitter breakdown voltage

VCE

O

IC= 10mA, IB=0

25

V

Emitter-base breakdown voltage

VEB

O

IE= 10μA, IC=0

5

V

Collector cut-off current

ICB

O

VCB= 25 V ,

IE=0

0.1

μA

Emitter cut-off current

IEB

O

VEB= 4V, IC=0

0.1

μA

DC current gain

hFE(1

)

VCE= 1V, IC= 100mA

100

630

hFE(2

)

VCE= 1V, IC= 300mA

60

Collector-emitter saturation voltage

VCE(sat)

IC= 500mA, IB= 50mA

0.7

V

Base-emitter saturation voltage

VBE(sat)

IC= 500mA, IB= 50mA

1.2

V

Base-emitter voltage

VB

E

VCE=1V, IC= 500mA

1.2

V

Collecter capactiance

Cob

VCB=10V ,f=1MHz

6

pF

Transition frequency

f

T

VCE= 5 V, IC= 50Ma

f=100MHz

170

MHz

CLASSIFICATION OF

hFE

Rank

6E

6F

6G

Range

100-250

160-400

250-630

(NPN)

1. BASE

2. EMITTER

SOT-23

3. COLLECTO

BC818-16

BC818-25

BC818-40

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