AM10P10-530I datasheet(1/5 Pages) ANALOGPOWER

Il numero della parte	AM10P10-530I

Spiegazioni elettronici	P-Channel 100-V (D-S) MOSFET

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Produttore elettronici	ANALOGPOWER [Analog Power]

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Analog Power

AM10P10-530I

P-Channel 100-V (D-S) MOSFET

VDS (V)

ID (A)

-7.9

-6.8

Symbol

Limit

Units

VDS

-100

VGS

±20

Continuous Drain Current

a

TC=25°C

ID

-8

IDM

-32

TC=25°C

IS

-8

A

Power Dissipation

a

TC=25°C

PD

50

W

TJ, Tstg

-55 to 175

°C

Symbol

Maximum

Units

RθJA

40

RθJC

3

Notes

a.

Package Limited

b.

Pulse width limited by maximum junction temperature

c.

Surface Mounted on 1” x 1” FR4 Board.

Pulsed Drain Current

b

THERMAL RESISTANCE RATINGS

°C/W

Parameter

Operating Junction and Storage Temperature Range

ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)

V

Parameter

Drain-Source Voltage

Gate-Source Voltage

PRODUCT SUMMARY

-100

rDS(on) (mΩ)

530 @ VGS = -10V

720 @ VGS = -4.5V

A

Maximum Junction-to-Ambient

c

Maximum Junction-to-Case

Continuous Source Current (Diode Conduction)

a

Key Features:

• Low rDS(on) trench technology

• Low thermal impedance

• Fast switching speed

Typical Applications:

• White LED boost converters

• Automotive Systems

• Industrial DC/DC Conversion Circuits

TO-251

1

Publication Order Number:

DS_AM10P10-530I_1A

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