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TLP801AF Scheda tecnica(PDF) 2 Page - Toshiba Semiconductor |
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TLP801AF Scheda tecnica(HTML) 2 Page - Toshiba Semiconductor |
2 / 9 page TLP801A(F) 2004-02-12 2 Markings Optical And Electrical Characteristics(Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10mA 1.00 1.15 1.30 V Reverse current IR VR = 5V ― ― 10 µA Peak emission wavelength λP IF = 20mA ― 940 ― nm Dark current ID(ICEO) VCE = 24V, IF = 0 ― ― 0.1 µA Peak sensitivity wavelength λP ― 820 ― nm Current transfer ratio IC / IF VCE = 5V, IF = 20mA 10 ― 165 % Collector −emitter saturation voltage VCE(sat) IF = 20mA, IC = 1mA ― 0.15 0.4 V Rise time tr ― 6 ― Fall time tf VCC = 5V, IC = 2mA, RL = 100Ω ― 6 ― µs Monthly lot number Product number Year of manufacture Month of manufacture (January to December denoted by letters A to L respectively) ( last digit of year of manufacture) Letter color: Silver |
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