Motore di ricerca datesheet componenti elettronici |
|
STK984-190-E Scheda tecnica(PDF) 6 Page - ON Semiconductor |
|
STK984-190-E Scheda tecnica(HTML) 6 Page - ON Semiconductor |
6 / 11 page STK984-190-E www.onsemi.com 6 4. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Typical data taken from packaged discrete device characteristics ELECTRICAL CHARACTERISTICS (Note 4) at Tc=25 C Parameter Symbol Test Conditions Min Typ Max Unit Chip-Case Resistance Θj-c Each MOSFET die to outside of case - - 4.1 C/W Drain-to-Source Breakdown Voltage VBR(DSS) VGS = 0 V, ID = 250 µA 40 - - V Drain-to-Source Breakdown Voltage Temperature Coefficient VBR(DSS) /TJ Note 5 - 40.8 - mV/ C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 40 V - - 1.0 μA Gate-to-Source Leakage Current IGSS VGS = 0 V, VGS = ±20 V ±100 nA Gate Threshold Voltage VGS(TH) 1.5 - 3.5 V Negative Gate Threshold Voltage Temperature Coefficient VGS(TH)// TJ Note 5 - 7 - mV/ C Drain-to-source ON resistance RDS(ON) VGS = 10 V, ID = 15 A, Note 5 - 7.6 - mΩ VGS = 5V, ID = 10 A, Note 5 - 10.9 - mΩ Output Saturation Voltage / Each FET (incudes the wiring resistance) VDS(sat) VGS = 10 V, ID = 30 A VB2 to VB1, VB2 to U/V/W; U/V/W to PG - 0.285 0.38 V Forward Transconductance gFS Note 5 - 8.54 - S Input Capacitance Ciss VGS = 0 V, VDS = 25 V, 10 MHz, Note 5 - 1725 - pF Output Capacitance Coss - 220 - pF Reverse transfer capacitance Crss - 160 - pF Total Gate Charge QG(TOT) VGS = 10 V, VDS = 32 V, ID = 30 A, Note 5 - 33 - nC Threshold Gate Charge QG(TH) - 2.0 - nC Gate-to-Source Charge QGS - 7.2 - nC Gate-to-Drain Charge QGD - 9.8 - nC Turn-on delay time td(on) VGS = 10 V, VDS = 32 V, ID = 30 A, RG = 2.5 Ω, Note 5 - 10.2 - ns Rise time tr - 17.9 - ns Turn-off delay time td(off) - 22.9 - ns Fall time tf - 4.5 - ns Forward Diode Voltage VSD VGS = 10 V, ISD = 10 A, Note 5 - 0.83 - V Reverse Recovery Time tRR VGS = 0 V, ISD = 30 A, dISD/dt = 100 A/µs Note 5 - 24.8 - ns Charge Time tA - 14.6 - ns Discharge Time tB - 10.2 - ns Reverse Recovery Charge QRR - 15.5 - nC |
Codice articolo simile - STK984-190-E |
|
Descrizione simile - STK984-190-E |
|
|
Link URL |
Privacy Policy |
ALLDATASHEETIT.COM |
Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |