SI2315DS datasheet(2/4 Pages) VISHAY

Il numero della parte	SI2315DS

Spiegazioni elettronici	P-Channel 1.25-W, 1.8-V (G-S) MOSFET

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Produttore elettronici	VISHAY [Vishay Siliconix]

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Si2315DS

Vishay Siliconix

www.vishay.com

2

Document Number: 70850

S-31990—Rev. C, 13-Oct-03

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Limits

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = -10 mA

-12

V

Gate-Threshold Voltage

VGS(th)

VDS = VGS, ID = -250 mA

-0.45

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "8 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = -12 V, VGS = 0 V

-1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = -12 V, VGS = 0 V, TJ = 55_C

-10

mA

On State Drain Currenta

ID( )

VDS v -5 V, VGS = -4.5 V

-6

A

On-State Drain Currenta

ID(on)

VDS v -5 V, VGS = -2.5 V

-3

A

VGS = -4.5 V, ID = -3.5 A

0.045

0.055

Drain-Source On-Resistancea

rDS(on)

VGS = -2.5 V, ID = -3 A

0.063

0.075

W

()

VGS = -1.8 V, ID = -2 A

0.093

0.118

Forward Transconductancea

gfs

VDS = -5 V, ID = -3.5 A

7

S

Diode Forward Voltage

VSD

IS = -1.6 A, VGS = 0 V

-1.2

V

Dynamicb

Total Gate Charge

Qg

9

15

Gate-Source Charge

Qgs

VDS = -6 V, VGS = -4.5 V

ID ^ -3.5 A

1.9

nC

Gate-Drain Charge

Qgd

ID ^ -3.5 A

1.5

Input Capacitance

Ciss

1225

Output Capacitance

Coss

VDS = -6 V, VGS = 0, f = 1 MHz

260

pF

Reverse Transfer Capacitance

Crss

130

Switchingb

Turn On Time

td(on)

13.0

20

Turn-On Time

tr

VDD = -6 V, RL = 6 W

ID ^ -10 A VGEN = -45 V

15

25

ns

Turn-Off Time

td(off)

ID ^ -1.0 A, VGEN = -4.5 V

RG = 6 W

50

70

ns

Turn-Off Time

tf

19

35

Notes

a.

For DESIGN AID ONLY, not subject to production testing.

b.

Pulse test: PW v300 ms duty cycle v2%.

c.

Switching time is essentially independent of operating temperature.

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