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SI2314EDS Scheda tecnica(PDF) 4 Page - Vishay Siliconix

Il numero della parte SI2314EDS
Spiegazioni elettronici  N-Channel 20-V (D-S) MOSFET
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Document Number: 71611
S-04683—Rev. B, 10-Sep-01
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10–3
10–2
1
10
600
10–1
10–4
100
0.01
0
1
10
12
4
6
100
600
0.1
Single Pulse Power
Time (sec)
2
8
–0.4
–0.3
–0.2
–0.1
–0.0
0.1
0.2
–50
–25
0
25
50
75
100
125
150
ID = 250 mA
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Threshold Voltage
TJ – Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 166_C/W
3. TJM – TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
10
TA = 25_C
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.00
0.05
0.10
0.15
0.20
024
68
ID = 5.0 A
20
1
0.01
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
VSD – Source-to-Drain Voltage (V)
VGS – Gate-to-Source Voltage (V)
0.1
TJ = 150_C
TJ = 25_C
10


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