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SI2314EDS Scheda tecnica(PDF) 4 Page - Vishay Siliconix |
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SI2314EDS Scheda tecnica(HTML) 4 Page - Vishay Siliconix |
4 / 4 page Si2314EDS Vishay Siliconix New Product www.vishay.com 4 Document Number: 71611 S-04683—Rev. B, 10-Sep-01 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 10–3 10–2 1 10 600 10–1 10–4 100 0.01 0 1 10 12 4 6 100 600 0.1 Single Pulse Power Time (sec) 2 8 –0.4 –0.3 –0.2 –0.1 –0.0 0.1 0.2 –50 –25 0 25 50 75 100 125 150 ID = 250 mA 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Threshold Voltage TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 166_C/W 3. TJM – TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM 10 TA = 25_C 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.00 0.05 0.10 0.15 0.20 024 68 ID = 5.0 A 20 1 0.01 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) 0.1 TJ = 150_C TJ = 25_C 10 |
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