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SI2300 Scheda tecnica(PDF) 1 Page - ZP Semiconductor

Il numero della parte SI2300
Spiegazioni elettronici  N-Channel Enhancement Mode MOSFET
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Produttore elettronici  ZPSEMI [ZP Semiconductor]
Homepage  http://zpsemi.com/
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SI2300 Scheda tecnica(HTML) 1 Page - ZP Semiconductor

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N-Channel Enhancement Mode MOSFET
Feature
20V/6A, RDS(ON) = 35mΩ(MAX) @VGS = 4.5V.
RDS(ON) = 45mΩ(MAX) @VGS = 2.5V.
Super High dense cell design for extremely low RDS(ON) .
Reliable and Rugged.
SC-59 for Surface Mount Package.
SC-59
A
pplications
LI-ION Protection Circuit
Absolute Maximum Ratings
TA=25
Unless Otherwise noted
Parameter
Symbol
Limit
Units
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±10
V
Drain Current-Continuous
ID
6
A
Electrical Characteristics
TA=25
Unless Otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ.
Max
Units
Off Characteristics
Drain to Source Breakdown Voltage
BVDSS
VGS=0V, ID=250μA
20
-
-
V
Zero-Gate Voltage Drain Current
IDSS
VDS=16V, VGS=0V
-
-
1
μA
Gate Body Leakage Current, Forward
IGSSF
VGS=10V, VDS=0V
-
-
100
nA
Gate Body Leakage Current, Reverse
IGSSR
VGS=-10V, VDS=0V
-
-
-100
nA
On Characteristics
Gate Threshold Voltage
VGS(th)
VGS= VDS, ID=250µA
0.4
-
1.3
V
Static Drain-source
On-Resistance
RDS(ON)
VGS =4.5V, ID =6.0A
-
28
35
VGS =2.5V, ID =5.2A
-
35
45
Drain-Source Diode Characteristics and Maximum Ratings
Drain-Source Diode Forward Voltage
VSD
VGS =0V, IS=1.5A
1.2
V
SC-59
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SI2300
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