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FQPF32N12V2 Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor |
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FQPF32N12V2 Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor |
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2 / 10 page  Rev. A, December 2003 ©2003 Fairchild Semiconductor Corporation Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.5mH, IAS = 32A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 32A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 120 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.14 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 V -- -- 1 µA VDS = 96 V, TC = 150°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 16 A -- 0.043 0.05 Ω gFS Forward Transconductance VDS = 40 V, ID = 16 A (Note 4) -- 25 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1430 1860 pF Coss Output Capacitance -- 310 405 pF Crss Reverse Transfer Capacitance -- 70 90 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 60 V, ID = 32 A, RG = 25 Ω (Note 4, 5) -- 16 42 ns tr Turn-On Rise Time -- 190 390 ns td(off) Turn-Off Delay Time -- 114 238 ns tf Turn-Off Fall Time -- 158 326 ns Qg Total Gate Charge VDS = 96 V, ID = 32 A, VGS = 10 V (Note 4, 5) -- 41 53 nC Qgs Gate-Source Charge -- 8 -- nC Qgd Gate-Drain Charge -- 18 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 32 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 128 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 32 A -- -- 1.4 V trr Reverse Recovery Time VGS = 0 V, IS = 32 A, dIF / dt = 100 A/µs (Note 4) -- 123 -- ns Qrr Reverse Recovery Charge -- 0.54 -- µC |
Codice articolo simile - FQPF32N12V2 |
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Descrizione simile - FQPF32N12V2 |
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