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FQP12N60C Scheda tecnica(PDF) 4 Page - Fairchild Semiconductor

Il numero della parte FQP12N60C
Spiegazioni elettronici  FQP12N60C/FQPF12N60C
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FQP12N60C Scheda tecnica(HTML) 4 Page - Fairchild Semiconductor

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Rev. B, October 2003
©2003 Fairchild Semiconductor Corporation
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
100 ms
10
µs
DC
10 ms
1 ms
100
µs
Operation in This Area
is Limited by R
DS(on)
※ Notes :
1. T
C = 25
o
C
2. T
J
= 150
oC
3. Single Pulse
V
DS, Drain-Source Voltage [V]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
100 ms
10
µs
DC
10 ms
1 ms
100
µs
Operation in This Area
is Limited by R
DS(on)
※ Notes :
1. T
C = 25
o
C
2. T
J = 150
o
C
3. Single Pulse
V
DS, Drain-Source Voltage [V]
Typical Characteristics (Continued)
Figure 9-1. Maximum Safe Operating Area
for FQP12N60C
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Figure 9-2. Maximum Safe Operating Area
for FQPF12N60C
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
※Notes:
1. V
GS = 0 V
2. I
D = 250
μ A
T
J, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
※ Notes :
1. V
GS = 10 V
2. I
D = 6.0 A
T
J, Junction Temperature [
o
C]
25
50
75
100
125
150
0
2
4
6
8
10
12
14
T
C, Case Temperature [
℃]


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