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SI4511DY-T1 Scheda tecnica(PDF) 6 Page - Vishay Siliconix

Il numero della parte SI4511DY-T1
Spiegazioni elettronici  N- and P-Channel 20-V (D-S) MOSFET
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Produttore elettronici  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI4511DY-T1 Scheda tecnica(HTML) 6 Page - Vishay Siliconix

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Si4511DY
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6
Document Number: 72223
S-41496—Rev. B, 09-Aug-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
P-CHANNEL
0
500
1000
1500
2000
2500
3000
04
8
12
16
20
0.6
0.8
1.0
1.2
1.4
1.6
−50
−25
0
25
50
75
100
125
150
0
1
2
3
4
5
0
3
6
9
12
15
18
0.00
0.02
0.04
0.06
0.08
0.10
0
8
16
24
32
40
VDS − Drain-to-Source Voltage (V)
Crss
Coss
Ciss
VDS = 10 V
ID = 6.2 A
ID − Drain Current (A)
VGS = 4.5 V
ID = 6.2 A
VGS = 2.5 V
Gate Charge
On-Resistance vs. Drain Current
Qg − Total Gate Charge (nC)
Capacitance
On-Resistance vs. Junction Temperature
TJ − Junction Temperature (_C)
0.0
0.3
0.6
0.9
1.2
1.5
0.00
0.02
0.04
0.06
0.08
0.10
0
1234
5
ID = 6.2 A
40
10
1
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
VSD − Source-to-Drain Voltage (V)
VGS − Gate-to-Source Voltage (V)
VGS = 4.5 V
TJ = 150_C
TJ = 25_C


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