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SI4511DY Scheda tecnica(PDF) 1 Page - Vishay Siliconix

Il numero della parte SI4511DY
Spiegazioni elettronici  N- and P-Channel 20-V (D-S) MOSFET
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Produttore elettronici  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SI4511DY Scheda tecnica(HTML) 1 Page - Vishay Siliconix

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FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D Level Shift
D Load Switch
Si4511DY
Vishay Siliconix
Document Number: 72223
S-41496—Rev. B, 09-Aug-04
www.vishay.com
1
N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
N Channel
20
0.0145 @ VGS = 10 V
9.6
N-Channel
20
0.017 @ VGS = 4.5 V
8.6
P Channel
20
0.033 @ VGS = −4.5 V
−6.2
P-Channel
−20
0.050 @ VGS = −2.5 V
−5
S1
D1
G1
D1
S2
D2
G2
D2
SO-8
5
6
7
8
Top View
2
3
4
1
S2
G2
G1
S1
D2
D1
Ordering Information: Si4511DY
Si4511DY-T1 (with Tape and Reel)
Si4511DY—E3 (Lead (Pb)-Free)
Si4511DY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol
10 sec.
Steady State
10 sec.
Steady State
Unit
Drain-Source Voltage
VDS
20
−20
V
Gate-Source Voltage
VGS
"16
"12
V
Continuous Drain Current (TJ = 150_C)a, b
TA = 25_C
ID
9.6
7.2
−6.2
−4.6
Continuous Drain Current (TJ = 150_C)a, b
TA = 70_C
ID
7.7
5.8
−4.9
−3.7
A
Pulsed Drain Current
IDM
40
−40
A
Continuous Source Current (Diode Conduction)a, b
IS
1.7
0.9
−1.7
0.9
Maximum Power Dissipationa, b
TA = 25_C
PD
2
1.1
2
1.1
W
Maximum Power Dissipationa, b
TA = 70_C
PD
1.3
0.7
1.3
0.7
W
Operating Junction and Storage Temperature Range
TJ, Tstg
−55 to 150
_C
THERMAL RESISTANCE RATINGS
N-Channel
P- Channel
Parameter
Symbol
Typ
Max
Typ
Max
Unit
Mi
J
ti
t A bi ta
t v 10 sec
R
50
62.5
50
62.5
Maximum Junction-to-Ambienta
Steady-State
RthJA
85
110
90
110
_C/W
Maximum Junction-to-Foot (Drain)
Steady-State
RthJF
30
40
30
35
C/W
Notes
a.
Surface Mounted on FR4 Board.
b.
t v 10 sec


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