SI2301BD datasheet(4/5 Pages) VISHAY

Il numero della parte	SI2301BD

Spiegazioni elettronici	P-Channel 2.5-V (G-S) MOSFET

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Si2301BDS

Vishay Siliconix

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Document Number: 72066

S-31990—Rev. B, 13-Oct-03

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0

1234

5

-0.2

-0.1

0.0

0.1

0.2

0.3

0.4

-50

-25

0

25

50

75

100

125

150

TJ = 150_C

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

Threshold Voltage

Single Pulse Power

Square Wave Pulse Duration (sec)

VSD - Source-to-Drain Voltage (V)

VGS - Gate-to-Source Voltage (V)

TJ - Temperature (_C)

Time (sec)

ID = 2.8 A

ID = 250 mA

10

0.1

0

0.2

0.4

0.6

0.8

1.0

1.2

TJ = 25_C

1

TA = 25_C

Safe Operating Area

VDS - Drain-to-Source Voltage (V)

100

1

0.1

1

10

100

0.01

10

0.1

10 ms

100 ms

1 ms

10 ms

100 ms

TA = 25_C

Single Pulse

10

8

6

4

2

0

0.01

0.1

1

10

100

1000

dc, 100 s, 10 s, 1 s

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