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SI2301BD Scheda tecnica(PDF) 4 Page - Vishay Siliconix |
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SI2301BD Scheda tecnica(HTML) 4 Page - Vishay Siliconix |
4 / 5 page Si2301BDS Vishay Siliconix www.vishay.com 4 Document Number: 72066 S-31990—Rev. B, 13-Oct-03 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 1234 5 -0.2 -0.1 0.0 0.1 0.2 0.3 0.4 -50 -25 0 25 50 75 100 125 150 TJ = 150_C Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Single Pulse Power Square Wave Pulse Duration (sec) VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) TJ - Temperature (_C) Time (sec) ID = 2.8 A ID = 250 mA 10 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 25_C 1 TA = 25_C Safe Operating Area VDS - Drain-to-Source Voltage (V) 100 1 0.1 1 10 100 0.01 10 0.1 10 ms 100 ms 1 ms 10 ms 100 ms TA = 25_C Single Pulse 10 8 6 4 2 0 0.01 0.1 1 10 100 1000 dc, 100 s, 10 s, 1 s |
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