SI1900DL datasheet(1/4 Pages) VISHAY

Il numero della parte	SI1900DL

Spiegazioni elettronici	Dual N-Channel 30-V (D-S) MOSFET

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Si1900DL

Vishay Siliconix

Document Number: 71251

S-21374—Rev. C, 12-Aug-02

www.vishay.com

1

Dual N-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)

0.480 @ VGS = 10 V

0.63

30

0.700 @ VGS = 4.5 V

0.52

Marking Code

PB

XX

Lot Traceability

and Date Code

Part # Code

SOT-363

SC-70 (6-LEADS)

6

4

1

2

3

5

Top View

S1

G1

D2

D1

G2

S2

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

VDS

30

Gate-Source Voltage

VGS

"20

V

_

TA = 25_C

0.63

0.59

Continuous Drain Current (TJ = 150_C)a

TA = 85_C

ID

0.45

0.43

Pulsed Drain Current

IDM

1.0

A

Continuous Source Current (Diode Conduction)a

IS

0.25

0.23

TA = 25_C

0.30

0.27

Maximum Power Dissipationa

TA = 85_C

PD

0.16

0.14

W

Operating Junction and Storage Temperature Range

TJ, Tstg

-55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t

v 5 sec

360

415

Maximum Junction-to-Ambienta

Steady State

RthJA

400

460

_C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

300

350

C/W

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

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