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TPD3S014DBVR Scheda tecnica(PDF) 5 Page - Texas Instruments

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Il numero della parte TPD3S014DBVR
Spiegazioni elettronici  Current Limit Switch and D/D??ESD Protection for USB Host Ports
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Produttore elettronici  TI1 [Texas Instruments]
Homepage  http://www.ti.com
Logo TI1 - Texas Instruments

TPD3S014DBVR Scheda tecnica(HTML) 5 Page - Texas Instruments

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TPD3S014, TPD3S044
www.ti.com
SLVSCP4B – OCTOBER 2014 – REVISED AUGUST 2015
7.4 Thermal Information
TPD3S0x4
THERMAL METRIC(1)(2)
DBV (SOT-23)
UNIT
6 PINS
RθJA
Junction-to-ambient thermal resistance
185.8
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
124.7
°C/W
RθJB
Junction-to-board thermal resistance
32.0
°C/W
ψJT
Junction-to-top characterization parameter
23.7
°C/W
ψJB
Junction-to-board characterization parameter
31.5
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
°C/W
RθJA(Custom)
See the Power Dissipation and Junction Temperature section
120.3
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
(2)
See Device Comparison Table.
7.5 Electrical Characteristics: TJ = TA = 25°C
Unless otherwise noted: VIN = 5 V, VEN = VIN, IOUT = 0 A. See Device Comparison Table for the rated current of each part
number. Parametrics over a wider operational range are shown in the second Electrical Characteristics: –40°C ≤ TJ ≤ 125°C
table.
PARAMETER
TEST CONDITIONS(1)
MIN
TYP
MAX
UNIT
POWER SWITCH
TPD3S014
97
110
TPD3S014: –40°C
≤ (TJ, TA) ≤ 85°C
96
130
RDS(on)
Input – Output resistance
m
Ω
TPD3S044
74
91
TPD3S044: –40°C
≤ (TJ, TA) ≤ 85°C
74
106
CURRENT LIMIT
TPD3S014
0.67
0.85
1.01
IOS
(2)
Current limit, see Figure 27
A
TPD3S044
1.70
2.15
2.50
SUPPLY CURRENT
IOUT = 0A
0.02
1
ISD
Supply current, switch disabled
µA
–40°C
≤ (TJ, TA) ≤ 85°C, VIN = 5.5 V, IOUT = 0 A
2
IOUT = 0A
66
74
ISE
Supply current, switch enabled
µA
–40°C
≤ (TJ, TA) ≤ 85°C, VIN = 5.5 V, IOUT = 0 A
85
VOUT = 5 V, VIN = 0 V, Measure IVOUT
0.2
1
IREV
Reverse leakage current
µA
–40°C
≤ (TJ, TA) ≤ 85°C, VOUT = 5 V, VIN = 0 V,
5
measure IVOUT
OUTPUT DISCHARGE
RPD
Output pull-down resistance(3)
VIN = VOUT = 5 V, disabled
400
456
600
Ω
ESD PROTECTION
Differential capacitance between
ΔCIO
ƒ = 1 MHz, VIO = 2.5 V
0.02
pF
the D1, D2 lines
CIO
(D1, D2 to GND)
ƒ = 1 MHz, VIO = 2.5 V
1.4
pF
Dx to GND
Dynamic on-resistance D1, D2
RDYN
0.2
Ω
IEC clamps(4)
GND to Dx
(1)
Pulsed testing techniques maintain junction temperature approximately equal to ambient temperature
(2)
See Current Limit for explanation of this parameter.
(3)
These Parameters are provided for reference only, and do not constitute a part of TI’s published device specifications for purposes of
TI’s product warranty.
(4)
RDYN was extracted using the least squares first of the TLP characteristics between I = 20 A and I = 30 A.
Copyright © 2014–2015, Texas Instruments Incorporated
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