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TPD1S514 Scheda tecnica(PDF) 4 Page - Texas Instruments

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Il numero della parte TPD1S514
Spiegazioni elettronici  Family USB Charger Over Voltage, Surge and ESD Protection for V(BUS) PIN
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Produttore elettronici  TI1 [Texas Instruments]
Homepage  http://www.ti.com
Logo TI1 - Texas Instruments

TPD1S514 Scheda tecnica(HTML) 4 Page - Texas Instruments

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TPD1S514x
SLVSCF6E – APRIL 2014 – REVISED OCTOBER 2015
www.ti.com
7 Specifications
7.1 Absolute Maximum Ratings
(1) (2)
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
VBUS_CON
Supply voltage from USB connector
–0.3
30
V
VBUS_SYS
Internal Supply DC voltage Rail on the PCB
–0.3
20
V
IBUS
Continuous input current on VBUS_CON pin
(3)
3.5
A
IOUT
Continuous output current on VBUS_CON pin
(3)
3.5
A
IPEAK
Peak Input and Output Current on VBUS_CON, VBUS_SYS pin (10 ms)
8
A
IDIODE
Continuous forward current through the FET body diode
1
A
IPOWER
Continuous Current through VBUS_POWER
1
mA
VEN
Voltage on Input pin (EN)
7
V
VBUS_POWER
Continuous Voltage at VBUS_POWER
TPD1S514-1
See(4)
V
TPD1S514-2
See(4)
TPD1S514-3
See(4)
TPD1S514
See(4)
TSTG
Storage temperature range
–65
150
°C
TA
Operating Free Air Temperature
–40
85
°C
IEC 61000-4-5 Peak Pulse Current (tp = 8/20μs)
VBUS_CON pin
30
A
IEC 61000-4-5 Peak Pulse Power (tp = 8/20μs)
VBUS_CON pin
900
W
IEC 61000-4-5 Open circuit voltage (tp = 1.2/50 µs)
VBUS_CON pin
100
V
CLOAD
Output load capacitance
VBUS_SYS pin
0.1
100
µF
CCON
Input capacitance
VBUS_CON pin
0.1
50
µF
CPOW
VBUS_POWER Capacitance
VBUS_POWER pin
0.1
4.7
µF
(1)
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
(2)
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
(3)
Thermal limits and power dissipation limits must be observed.
(4)
6.9 V or VBUS_CON + 0.3 V, whichever is smaller.
7.2 ESD Ratings
VALUE
UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±2000
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)
±500
V(ESD)
Electrostatic discharge
V
IEC 61000-4-2 Contact Discharge
VBUS_CON pin
±15000
IEC 61000-4-2 Air-gap Discharge
VBUS_CON pin
±15000
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with
less than 500-V HBM is possible with the necessary precautions.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with
less than 250-V CDM is possible with the necessary precautions.
4
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