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TPD1S514 Scheda tecnica(PDF) 4 Page - Texas Instruments |
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TPD1S514 Scheda tecnica(HTML) 4 Page - Texas Instruments |
4 / 28 page TPD1S514x SLVSCF6E – APRIL 2014 – REVISED OCTOBER 2015 www.ti.com 7 Specifications 7.1 Absolute Maximum Ratings (1) (2) over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT VBUS_CON Supply voltage from USB connector –0.3 30 V VBUS_SYS Internal Supply DC voltage Rail on the PCB –0.3 20 V IBUS Continuous input current on VBUS_CON pin (3) 3.5 A IOUT Continuous output current on VBUS_CON pin (3) 3.5 A IPEAK Peak Input and Output Current on VBUS_CON, VBUS_SYS pin (10 ms) 8 A IDIODE Continuous forward current through the FET body diode 1 A IPOWER Continuous Current through VBUS_POWER 1 mA VEN Voltage on Input pin (EN) 7 V VBUS_POWER Continuous Voltage at VBUS_POWER TPD1S514-1 See(4) V TPD1S514-2 See(4) TPD1S514-3 See(4) TPD1S514 See(4) TSTG Storage temperature range –65 150 °C TA Operating Free Air Temperature –40 85 °C IEC 61000-4-5 Peak Pulse Current (tp = 8/20μs) VBUS_CON pin 30 A IEC 61000-4-5 Peak Pulse Power (tp = 8/20μs) VBUS_CON pin 900 W IEC 61000-4-5 Open circuit voltage (tp = 1.2/50 µs) VBUS_CON pin 100 V CLOAD Output load capacitance VBUS_SYS pin 0.1 100 µF CCON Input capacitance VBUS_CON pin 0.1 50 µF CPOW VBUS_POWER Capacitance VBUS_POWER pin 0.1 4.7 µF (1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied. (2) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum. (3) Thermal limits and power dissipation limits must be observed. (4) 6.9 V or VBUS_CON + 0.3 V, whichever is smaller. 7.2 ESD Ratings VALUE UNIT Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±500 V(ESD) Electrostatic discharge V IEC 61000-4-2 Contact Discharge VBUS_CON pin ±15000 IEC 61000-4-2 Air-gap Discharge VBUS_CON pin ±15000 (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 500-V HBM is possible with the necessary precautions. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 250-V CDM is possible with the necessary precautions. 4 Submit Documentation Feedback Copyright © 2014–2015, Texas Instruments Incorporated Product Folder Links: TPD1S514x |
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