IO

GND

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8

TPD1E1B04

SLVSDL0A – MAY 2016 – REVISED JULY 2016

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7 Detailed Description

7.1 Overview

The TPD1E1B04 is a bidirectional ESD Protection Diode with ultra-low clamping voltage. This device can

dissipate ESD strikes above the maximum level specified by the IEC 61000-4-2 International Standard. The ultra-

low clamping makes this device ideal for protecting any sensitive signal pins.

7.2 Functional Block Diagram

7.3 Feature Description

7.3.1 IEC 61000-4-2 ESD Protection

The I/O pins can withstand ESD events up to ±30-kV contact and ±30-kV air gap. An ESD-surge clamp diverts

the current to ground.

7.3.2 IEC 61000-4-4 EFT Protection

The I/O pins can withstand an electrical fast transient burst of up to 80 A (5/50 ns waveform, 4 kV with 50-

Ω

impedance). An ESD-surge clamp diverts the current to ground.

7.3.3 IEC 61000-4-5 Surge Protection

The I/O pins can withstand surge events up to 6.3 A and 50 W (8/20 µs waveform). An ESD-surge clamp diverts

this current to ground.

7.3.4 IO Capacitance

The capacitance between each I/O pin to ground is 1 pF (typical) and 1.3 pF (maximum).

7.3.5 DC Breakdown Voltage

The DC breakdown voltage of each I/O pin is ±6.4 V typical. This ensures that sensitive equipment is protected

from surges above the reverse standoff voltage of ±3.6 V.

7.3.6 Low Leakage Current

The I/O pins feature an low leakage current of 100 nA (maximum) with a bias of ±2.5 V.

7.3.7 Extremely Low ESD Clamping Voltage

7.3.8 Industrial Temperature Range

This device features an industrial operating range of –40°C to +125°C.

7.3.9 Industry Standard Footprint

The layout of this device makes it simple and easy to add protection to an existing layout. The packages offers

flow-through routing, requiring minimal modification to an existing layout.