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TPD1E1B04DPYT Scheda tecnica(PDF) 4 Page - Texas Instruments |
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TPD1E1B04DPYT Scheda tecnica(HTML) 4 Page - Texas Instruments |
4 / 17 page 4 TPD1E1B04 SLVSDL0A – MAY 2016 – REVISED JULY 2016 www.ti.com Product Folder Links: TPD1E1B04 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) MIN MAX UNIT Electrical fast transient IEC 61000-4-4 (5/50 ns) 80 A Peak pulse IEC 61000-4-5 Power (tp - 8/20 µs) 50 W IEC 61000-4-5 Current (tp - 8/20 µs) 6.3 A TA Operating free-air temperature –40 125 °C Tstg Storage temperature –65 155 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±4000 V Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1500 6.3 ESD Ratings—IEC Specification VALUE UNIT V(ESD) Electrostatic discharge IEC 61000-4-2 contact discharge ±30000 V IEC 61000-4-2 air-gap discharge ±30000 6.4 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT VIO Input pin voltage –3.6 3.6 V TA Operating free-air temperature –40 125 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 6.5 Thermal Information THERMAL METRIC(1) TPD1E1B04 UNIT DPY (X1SON) 2 PINS RθJA Junction-to-ambient thermal resistance 420 °C/W RθJC(top) Junction-to-case (top) thermal resistance 169.3 °C/W RθJB Junction-to-board thermal resistance 276.1 °C/W ψJT Junction-to-top characterization parameter 122.1 °C/W ψJB Junction-to-board characterization parameter 157.3 °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W |
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