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SS8050 Scheda tecnica(PDF) 2 Page - Diode Semiconductor Korea |
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SS8050 Scheda tecnica(HTML) 2 Page - Diode Semiconductor Korea |
2 / 4 page Silicon Epitaxial Planar Transistor SS8050 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=2mA,IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 5 V Collector cut-off current ICBO VCB=40V,IE=0 0.1 μA Collector cut-off current ICEO VCE=20V,IB=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA VCE=1V,IC=100mA 120 400 DC current gain hFE VCE=1V,IC=800mA 40 Collector-emitter saturation voltage VCE(sat) IC=800 mA, IB= 80mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=800 mA, IB= 80mA 1.2 V Base-emitter voltage VBE VCE=1V IC=10mA 1 V Transition frequency fT VCE=10V, IC= 50mA f=30MHz 100 MHz CLASSIFICATION OF hFE(1) Rank L H J Range 120-200 200-350 300-400 www.diode.kr Diode Semiconductor Korea |
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