SUD50P04-09L datasheet(1/4 Pages) VISHAY

Il numero della parte	SUD50P04-09L

Spiegazioni elettronici	P-Channel 40-V (D-S), 175C MOSFET

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Produttore elettronici	VISHAY [Vishay Siliconix]

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Vishay Siliconix

SUD50P04-09L

Document Number: 72243

S-71660-Rev. B, 06-Aug-07

www.vishay.com

1

New Product

P-Channel 40-V (D-S), 175 °C MOSFET

FEATURES

•

TrenchFET® Power MOSFETS

•

175 °C Junction Temperature

PRODUCT SUMMARY

VDS (V)

rDS(on) (Ω)

ID (A)

d

- 40

0.0094 at VGS = - 10 V

- 50

0.0145 at VGS = - 4.5 V

- 50

TO-252

S

GD

Top View

Drain Connected to Tab

Ordering Information: SUD50P04-09L

SUD50P04-09L (Lead (Pb)-free)

S

G

D

P-Channel MOSFET

Notes:

a. Duty cycle

≤ 1 %.

b. When Mounted on 1" square PCB (FR-4 material).

c. See SOA curve for voltage derating.

d. Package limited.

* Pb containing terminations are not RoHS compliant, exemptions may apply.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

- 40

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 175 °C)

TC = 25 °C

ID

- 50d

A

TC = 125 °C

- 50d

Pulsed Drain Current

IDM

- 100

Avalanche Current

IAS

- 50

Single Avalanche Energya

L = 0.1 mH

EAS

125

mJ

Power Dissipation

TC = 25 °C

PD

136c

W

TA = 25 °C

3b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Junction-to-Ambientb

t

≤ 10 sec

RthJA

15

18

°C/W

Steady State

40

50

Junction-to-Case

RthJC

0.82

1.1

Available

RoHS*

COMPLIANT

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