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SLYZ022 Scheda tecnica(PDF) 4 Page - Texas Instruments

Il numero della parte SLYZ022
Spiegazioni elettronici  TLV717P 150-mA, Low-Dropout Regulator With Foldback Current Limit for Portable
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Produttore elettronici  TI1 [Texas Instruments]
Homepage  http://www.ti.com
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TLV717P
SBVS176B – OCTOBER 2011 – REVISED APRIL 2016
www.ti.com
Product Folder Links: TLV717P
Submit Documentation Feedback
Copyright © 2011–2016, Texas Instruments Incorporated
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
6 Specifications
6.1 Absolute Maximum Ratings
At TJ = 25°C, unless otherwise noted. All voltages are with respect to GND.
(1)
MIN
MAX
UNIT
Voltage
Input range, VIN
–0.3
6
V
Enable range, VEN
–0.3
VIN + 0.3
Output range, VOUT
–0.3
6
Current
Maximum output, IOUT
Internally limited
Output short-circuit duration
Indefinite
Continuous total power dissipation, PDISS
See Thermal Information
Temperature
Junction, TJ
–55
150
°C
Storage junction, Tstg
–55
150
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±2000
V
Charged-device model (CDM), per JEDEC specification JESD22-
C101(2)
±500
6.3 Recommended Operating Conditions
over operating junction temperature range (unless otherwise noted)
MIN
MAX
UNIT
VIN
Input voltage
1.7
5.5
V
VOUT
Output voltage
1.2
5
V
IOUT
Output current
0
150
mA
VEN
Enable pin voltage
0
VIN
V
TJ
Junction temperature
–40
85
°C
6.4 Thermal Information
THERMAL METRIC
TLV717P
UNIT
DQN (X2SON)
4 PINS
RθJA
Junction-to-ambient thermal resistance
393.3
°C/W
RθJC(top)
Junction-to-case(top) thermal resistance
140.3
°C/W
RθJB
Junction-to-board thermal resistance
330
°C/W
ψJT
Junction-to-top characterization parameter
6.5
°C/W
ψJB
Junction-to-board characterization parameter
329
°C/W
RθJC(bot)
Junction-to-case(bottom) thermal resistance
147.5
°C/W


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