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ES3H Scheda tecnica(PDF) 1 Page - Diode Semiconductor Korea |
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ES3H Scheda tecnica(HTML) 1 Page - Diode Semiconductor Korea |
1 / 2 page 6.9± 0.25 1. 3± 0. 25 7.8± 0. 2 0.25± 0.06 FEATURES Low cost Low leakage Low forward voltage drop High current capability MECHANICAL DATA Case:JEDEC DO-214AB(SMC),molded plastic Terminals: Solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.007 ounces,0.21 grams Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. ES3J Maximum recurrent peak reverse voltage VRRM V Maximum RMS voltage VRMS V Maximum DC blocking voltage VDC V Maximum average forward rectified current @TA=100 Peak forward surge current 8.3ms single half-sine-wave superimposed on rated load @TJ=125 Maximum instantaneous forward voltage at 3.0 A V F V Maximum reverse current @TA=25 at rated DC blocking voltage @TA=125 Typical reverse recovery time (Note1) trr ns Typical junction capacitance (Note2) CJ pF Typical thermal resistance (Note3) RθJA /W Operating junction temperature range TJ Storage temperature range TSTG 1.70 SMC UNITS - 55 ---- + 150 ES3H 500 A 100 IFSM IR NOTE: 1. Measured with IF=0.5A, IR=1A, Irr=0.25A. A ES3H---ES3J A 10 Easily cleaned with Alcohol,Isopropanol and similar solvents IF(AV) 3.0 SURFACE MOUNT RECTIFIERS The plastic material carries U/L recognition 94V-0 600 500 420 2. Measured at 1.0MHZ and applied reverse voltage of 4.0V DC. 45 35 25 500 VOLTAGE RANGE: 500 --- 600 V CURRENT: 3.0 A - 55 ---- + 150 350 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 3. Thermal resistance f rom junction to ambient and junction to lead P.C.B.mounted on 0.27''X0.27''(7.0X7.0mm2) copper pad areas Dimensions in millimeters 600 www.diode.kr Diode Semiconductor Korea |
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