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UF3B Scheda tecnica(PDF) 2 Page - Diode Semiconductor Korea |
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UF3B Scheda tecnica(HTML) 2 Page - Diode Semiconductor Korea |
2 / 2 page 1 2 4 6 10 20 40 60 100 200 0.1 0.2 0.4 1 2 4 10 40 100 20 TJ=25 UF3A-UF3G UF3J-UF3M NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF. JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . INSTANTANEOUS FORWARD VOLTAGE, VOLTS UF3A --- UF3M FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC SET TIME BASE FOR 20/30 ns/cm FIG.2 -- TYPICAL FORWARD CHARACTERISTIC FIG.3 -- FORWARD DERATING CURVE z FIG.4 -- TYPICAL JUNCTION CAPACITANCE FIG.5 -- PEAK FORWARD SURGE CURRENT LEAD TEMPERATURE, NUMBER OF CYCLES AT 60Hz REVERSE VOLTAGE,VOLTS PULSE GENERATOR (NOTE2) D.U.T. 1 NONIN- DUCTIVE 50 N 1. 10 N1. OSCILLOSCOPE (NOTE 1) (+) 25VDC (approx) (-) -1.0A -0.25A 0 +0.5A trr 1cm 0 0.01 0.1 1.0 10 100 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 50\100\200V 600\800\1000V TJ=25 Pulse Width=300 µS 400V 0 1 10 100 5 8.3ms Single Half Sine-Wave 50 50 100 1 2 3 4 5 0 25 50 75 100 125 150 SinglePhase Half Wave 60HZ Resistive or InductiveLoad 0 175 Diode Semiconductor Korea www.diode.kr |
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