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SI2308DS Scheda tecnica(PDF) 3 Page - Vishay Siliconix |
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SI2308DS Scheda tecnica(HTML) 3 Page - Vishay Siliconix |
3 / 4 page Si2308DS Vishay Siliconix Document Number: 70797 S-31725—Rev. B, 18-Aug-03 www.vishay.com 3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 3 6 9 12 0 1234 5 0.0 0.2 0.4 0.6 0.8 1.0 0369 12 0 3 6 9 12 0 2468 10 0 2 4 6 8 10 0 1234 5 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 0 100 200 300 400 0 6 12 18 24 30 VGS = 10 thru 5 V 25_C TC = 125_C Crss Coss Ciss VDS = 30 V ID = 2.0 A VGS = 10 V ID = 2.0 A VGS = 4.5 V VGS = 10 V 4 V 3 V -55_C 1, 2 V Output Characteristics Transfer Characteristics Gate Charge On-Resistance vs. Drain Current VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Junction Temperature TJ - Junction Temperature (_C) |
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