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UF4001G Scheda tecnica(PDF) 1 Page - Diode Semiconductor Korea |
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UF4001G Scheda tecnica(HTML) 1 Page - Diode Semiconductor Korea |
1 / 2 page FEATURES Low cost Glass passivated juntion Low leakage Low forward voltage drop High current capability and similar solvents MECHANICAL DATA Case:JEDEC DO-41,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.012ounces,0.34 grams Mounting position: Any MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. UF 4003G UF 4004G UF 4005G UF 4006G UF 4007G UNITS Maximum recurrent peak reverse voltage VRRM 200 400 600 800 1000 V Maximum RMS voltage VRMS 140 280 420 560 700 V Maximum DC blocking voltage VDC 200 400 600 800 1000 V Maximum average forw ard rectified current 9.5mm lead length, @T A=75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J=125 Maximum instantaneous forw ard voltage @ 1.0 A VF V Maximum reverse current @T A=25 at rated DC blocking voltage @T A=100 Maximum reverse recovery time (Note1) t rr ns Typical junction capacitance (Note2) CJ pF Typical thermal resistance (Note3) RθJA /W Operating junction temperature range TJ Storage temperature range TSTG DO - 41 50 35 50 UF 4001G Easily cleaned with Freon,Alcohil,Isopropanop 100 70 UF4001G---UF4007G 2. Thermal resistance f rom junction to ambient. A NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. - 55---- +175 - 55---- +175 50.0 50 20 10 IF(AV) The plastic material carries U/L recognition 94V-0 IR 30.0 10.0 100.0 1.0 1.7 75 VOLTAGE RANGE: 50 --- 1000 V CURRENT: 1.0 A 100 UF 4002G 1.0 A GLASS PASSIVATED RECTIFIERS A IFSM Dimensions in millimeters www.diode.kr Diode Semiconductor Korea |
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