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1N4004 Scheda tecnica(PDF) 1 Page - Diode Semiconductor Korea

Il numero della parte 1N4004
Spiegazioni elettronici  PLASTIC SILICON RECTIFIERS
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Produttore elettronici  DSK [Diode Semiconductor Korea]
Homepage  http://www.diode.kr/
Logo DSK - Diode Semiconductor Korea

1N4004 Scheda tecnica(HTML) 1 Page - Diode Semiconductor Korea

  1N4004 Datasheet HTML 1Page - Diode Semiconductor Korea 1N4004 Datasheet HTML 2Page - Diode Semiconductor Korea  
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FEATURES
Low cos t
D iffus ed junction
Low leakage
Low forward voltage drop
H igh current capability
and s im ilar s olvents
MECHANICAL DATA
C as e:JEDEC D O--41,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD -202,Method 208
Polarity: C olor band denotes cathode
Weight: 0.012ounces ,0.34 gram s
Mounting pos ition: Any
M AXIM UM RAT INGS AND ELECT RICAL CHARACT ERIST ICS
R atings at 25
am bient tem perature unles s otherw is e s pecified.
Single phas e,half w ave,60 H z,res is tive or inductive load. For capacitive load,derate by 20% .
1N
4003
1N
4004
1N
4005
1N
4006
1N
4007
UNITS
Max imum recurrent peak rev ers e voltage
VRRM
200
400
600
800
1000
V
Max imum RMS v oltage
VRMS
140
280
420
560
700
V
Max imum DC blocking voltage
VDC
200
400
600
800
1000
V
Max imum average f orw ard rectif ied c urrent
9.5mm lead lengths ,
@T
A =75
Peak f orw ard surge c urrent
8.3ms s ingle half -s ine-w av e
s uperimposed on rated load
@T
J =125
Max imum instantaneous f orw ard v oltage
@ 1.0 A
VF
V
Max imum revers e current
@T
A =25
at rated DC blocking v oltage
@T
A =100
Typical junc tion capac itanc e
(Note1)
CJ
pF
Typical thermal res istance
(Note2)
RθJA
/W
Operating junction temperature range
TJ
Storage temperature range
TSTG
50
35
50
1N
4001
15
1.0
50
2. Thermal resistance from junction to ambient.
A
50.0
1N4001---1N4007
A
5.0
Eas ily cleaned w ith Freon,Alcohol,Is opropanol
IF(AV)
1.0
PLASTIC SILICON RECTIFIERS
The plas tic m aterial carries U /L recognition 94V-0
A
40.0
IFSM
NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
- 55 ---- + 150
- 55 ---- + 150
IR
100
70
VOLT AGE RANG E: 50 --- 1000 V
CURRENT :
1.0 A
DO - 41
100
1N
4002
Dimensions in millimeters
www.diode.kr
Diode Semiconductor Korea


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