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MTB080C10Q8-0-T3-G Scheda tecnica(PDF) 7 Page - Cystech Electonics Corp.

Il numero della parte MTB080C10Q8-0-T3-G
Spiegazioni elettronici  N- and P-channel enhancement mode power MOSFET
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Produttore elettronici  CYSTEKEC [Cystech Electonics Corp.]
Homepage  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTB080C10Q8-0-T3-G Scheda tecnica(HTML) 7 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C703Q8
Issued Date : 2016.07.22
Revised Date :
Page No. : 7/12
MTB080C10Q8
CYStek Product Specification
Typical Characteristics : Q2( P-channel)
Typical Output Characteristics
0
2
4
6
8
012345
-VDS, Drain-Source Voltage(V)
-VGS=2.5V
10V
9V
8V
7V
6V
5V
4V
3V
3.5V
Brekdown Voltage vs Ambient Temperature
0.6
0.8
1
1.2
1.4
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
-ID=250μA,
VGS=0V
Static Drain-Source On-State resistance vs Drain Current
100
1000
0.01
0.1
1
10
100
-ID, Drain Current(A)
-VGS=4.5V
-VGS=10V
-VGS=4V
Reverse Drain Current vs Source-Drain Voltage
0.2
0.4
0.6
0.8
1
1.2
02
4
6
8
-IDR, Reverse Drain Current(A)
10
Tj=25°C
Tj=150°C
VGS=0V
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
0
50
100
150
200
250
300
350
400
450
500
02
4
6
8
10
Drain-Source On-State Resistance vs Junction Tempearture
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
-VGS=10V, -ID=2A
RDSON@Tj=25°C : 174mΩ typ.
-VGS, Gate-Source Voltage(V)
-ID=2A


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