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MTB050P10H8 Scheda tecnica(PDF) 6 Page - Cystech Electonics Corp. |
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MTB050P10H8 Scheda tecnica(HTML) 6 Page - Cystech Electonics Corp. |
6 / 11 page CYStech Electronics Corp. Spec. No. : C975H8 Issued Date : 2016.08.01 Revised Date : Page No. : 6/11 MTB050P10H8 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 0 10 20 30 40 50 60 70 80 0 12 3 45 67 8 -VGS, Gate-Source Voltage(V) VDS=-10V Single Pulse Maximum Power Dissipation 0 50 100 150 200 250 300 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width(s) TJ(MAX)=150°C TA=25°C RθJA=65°C/W Maximum Drain Current vs Case Temperature 0 5 10 15 20 25 25 50 75 100 125 150 175 TC, Case Temperature(°C) VGS=-10V, RθJC=3°C/W Maximum Safe Operating Area 0.1 1 10 100 0.1 1 10 100 1000 -VDS, Drain-Source Voltage(V) DC 10ms 100ms 1ms 100 μs RDSON Limited TC=25°C, VGS=-10V,Tj=150°C RθJC=3°C/W, Single Pulse Single Pulse Maximum Power Dissipation 0 100 200 300 400 500 600 0.0001 0.001 0.01 0.1 1 10 Pulse Width(s) TJ(MAX)=150°C TC=25°C RθJC=3°C/W Power Derating Curve 0 5 10 15 20 25 30 35 40 45 50 0 25 50 75 100 125 150 175 TC, Case Temperature(℃) |
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