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J111 Scheda tecnica(PDF) 1 Page - Linear Integrated Systems

Il numero della parte J111
Spiegazioni elettronici  SINGLE N-CHANNEL JFET
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Produttore elettronici  LINEAR [Linear Integrated Systems]
Homepage  http://www.linearsystems.com
Logo LINEAR - Linear Integrated Systems

J111 Scheda tecnica(HTML) 1 Page - Linear Integrated Systems

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FEATURES
DIRECT REPLACEMENT FOR SILICONIX J/SST111 SERIES
LOW GATE LEAKAGE CURRENT
5pA
FAST SWITCHING
4ns
ABSOLUTE MAXIMUM RATINGS
1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
-55 to 150°C
Junction Operating Temperature
-55 to 135°C
Maximum Power Dissipation
Continuous Power Dissipation (J)
360mW
Continuous Power Dissipation (SST)
350mW
Maximum Currents
Gate Current
50mA
Maximum Voltages
Gate to Drain
-35V
Gate to Source
-35V
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated)
J/SST111
J/SST112
J/SST113
SYM.
CHARACTERISTIC
TYP
MIN
MAX
MIN
MAX
MIN
MAX
UNIT
CONDITIONS
BVGSS
Gate to Source Breakdown Voltage
-35
-35
-35
IG = -1µA, VDS = 0V
VGS(off)
Gate to Source Cutoff Voltage
-3
-10
-1
-5
-3
VDS = 5V, ID = 1µA
VGS(F)
Gate to Source Forward Voltage
0.7
V
IG = 1mA, VDS = 0V
IDSS
Drain to Source Saturation Current
2
20
5
2
mA
VDS = 15V, VGS = 0V
IGSS
Gate Leakage Current
-0.005
-1
-1
-1
nA
VGS = -15V, VDS = 0V
IG
Gate Operating Current
-5
pA
VDG = 15V, ID = 10mA
ID(off)
Drain Cutoff Current
0.005
1
1
1
nA
VDS = 5V, VGS = -10V
rDS(on)
Drain to Source On Resistance
30
50
100
IG = 1mA, VDS = 0V
J SERIES
TO-92
BOTTOM VIEW
12
3
DS G
TO 92
SST SERIES
1
2
3
SOT-23
TOP VIEW
D
G
S
Linear Integrated Systems
J/SST111 SERIES
SINGLE N-CHANNEL JFET
Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261


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