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IXYX100N65C3D1 Scheda tecnica(PDF) 1 Page - IXYS Corporation |
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IXYX100N65C3D1 Scheda tecnica(HTML) 1 Page - IXYS Corporation |
1 / 7 page © 2014 IXYS CORPORATION, All Rights Reserved XPTTM 650V IGBT GenX3TM w/ Diode IXYK100N65C3D1 IXYX100N65C3D1 V CES = 650V I C110 = 100A V CE(sat) 2.3V t fi(typ) = 60ns Symbol Test Conditions Maximum Ratings V CES T J = 25°C to 175°C 650 V V CGR T J = 25°C to 175°C, R GE = 1M 650 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 T C = 25°C (Chip Capability) 200 A I LRMS Terminal Current Limit 160 A I C110 T C = 110°C 100 A I F110 T C = 110°C 67 A I CM T C = 25°C, 1ms 420 A I A T C = 25°C 50 A E AS T C = 25°C 600 mJ SSOA V GE = 15V, TVJ = 150°C, RG = 3 I CM = 200 A (RBSOA) Clamped Inductive Load @V CE VCES t sc V GE = 15V, VCE = 360V, TJ = 150°C 7 μs (SCSOA) R G = 10 , Non Repetitive P C T C = 25°C 830 W T J -55 ... +175 °C T JM 175 °C T stg -55 ... +175 °C T L Maximum Lead Temperature for Soldering 300 °C T SOLD 1.6 mm (0.062in.) from Case for 10s 260 °C M d Mounting Torque (TO-264) 1.13/10 Nm/lb.in F C Mounting Force (PLUS247) 20..120 /4.5..27 N/lb Weight TO-264 10 g PLUS247 6 g DS100631(10/14) Extreme Light Punch Through IGBT for 20-60kHz Switching Symbol Test Conditions Characteristic Values (T J = 25C, Unless Otherwise Specified) Min. Typ. Max. BV CES I C = 250μA, V GE = 0V 650 V V GE(th) I C = 250μA, V CE = VGE 3.5 6.0 V I CES V CE = VCES, VGE = 0V 50 μA T J = 150°C 3 mA I GES V CE = 0V, VGE = ±20V ±100 nA V CE(sat) I C = 70A, V GE = 15V, Note 1 1.8 2.3 V T J = 150°C 2.2 V Features International Standard Packages Optimized for 20-60kHz Switching Square RBSOA Avalanche Rated Short Circuit Capability Anti-Parallel Ultra Fast Diode High Current Handling Capability Advantages High Power Density Low Gate Drive Requirement Applications Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts G = Gate E = Emitter C = Collector Tab = Collector TO-264 (IXYK) E G C PLUS247 (IXYX) G Tab Tab E C G Advance Technical Information |
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