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LM3560 Scheda tecnica(PDF) 4 Page - Texas Instruments |
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LM3560 Scheda tecnica(HTML) 4 Page - Texas Instruments |
4 / 48 page LM3560 SNOSB43B – SEPTEMBER 2011 – REVISED AUGUST 2013 www.ti.com ELECTRICAL CHARACTERISTICS (1) (2) (continued) Limits in standard typeface are for TA = +25°C. Limits in boldface type apply over the full operating ambient temperature range ( −40°C ≤ TA ≤ +85°C). Unless otherwise specified, VIN = 3.6V, VHWEN = VIN. Symbol Parameter Test Conditions Min Typ Max Unit Output Over- ON Threshold 4.925 5 5.075 VOVP Voltage Protection V OFF Threshold 4.8 Trip Point(3) Step-Up DC/DC Converter Specifications PMOS Switch On- RPMOS IPMOS = 1A 80 m Ω Resistance NMOS Switch On- RNMOS INMOS = 1A 65 m Ω Resistance CL bits = 00, 3.0V ≤ VIN ≤ 4.2V 1.44 1.6 1.76 CL bits = 01, 3.0V ≤ VIN ≤ 4.2V 2.02 2.3 2.58 Switch Current ICL A Limit(4) CL bits = 10, 3.0V ≤ VIN ≤ 4.2V 2.64 3.0 3.36 CL bits = 11, 3.0V ≤ VIN ≤ 4.2V 3.17 3.6 4.03 Output Short IOUT_SC Circuit Current VOUT < 2.3V 300 mA Limit Message Indicator Register, bits[2:0] = 111, 3.0V ≤ VIN ≤ 4.2V, ILED/NTC Indicator Current 16 18 20 mA VLEDI/NTC = 2V Comparator Trip VTRIP Configuration Register 1, bit4 = 1, 3.0V ≤ VIN ≤ 4.2V 0.97 1 1.03 V Threshold Switching fSW 3.0V ≤ VIN ≤ 4.2V 1.8 2 2.2 MHz Frequency Timeout Duration tTIMEOUT 3.0V ≤ VIN ≤ 4.2V −10% +10% ms (5), (6) Device Not Switching, VOUT = 3V 900 µA Quiescent Supply Device Switching, VOUT = 4.5V 1.97 mA IQ Current Indicate Mode, Message Indicator Register, bits[2:0] = 111, 590 µA 3.0V ≤ VIN ≤ 4.2V Shutdown Supply ISHDN VHWEN = GND, 3.0V ≤ VIN ≤ 4.2V 0.02 1.25 Current µA Standby Supply ISTBY VHWEN = VIN , 3.0V ≤ VIN ≤ 4.2V 1.25 2 Current VIN Monitor VIN_TH VIN Monitor Register = 0x01 2.85 2.9 2.95 V Threshold VIN Flash Monitor VIN_FLASH_TH VIN Monitor Register = 0x08 2.85 2.9 2.95 V Threshold Flash to Torch LED TX_ Low to High, Current Settling 2 ILED1 + ILED2 = 2A to 187.5 mA Time tTX µs Torch to Flash LED TX_ High to Low, Current Settling 160 ILED1 + ILED2 = 187.5mA to 2A Time (3) The typical curve for Over-Voltage Protection (OVP) is measured in closed loop using the typical application circuit . The OVP value is found by forcing an open circuit in the LED1 and LED2 path and recording the peak value of VOUT. The value given in the Electrical Table is found in an open loop configuration by ramping the voltage at OUT until the OVP comparator trips. The closed loop data can appear higher due to the stored energy in the inductor being dumped into the output capacitor after the OVP comparator trips. At worst case is an open circuit condition where the output voltage can continue to rise after the OVP comparator trips by approximately IIN×sqrt(L/COUT). (4) The typical curve for Current Limit is measured in closed loop using the typical application circuit by increasing IOUT until the peak inductor current stops increasing. The value given in the Electrical Table is measured open loop and is found by forcing current into SW until the current limit comparator threshold is reached. Closed loop data appears higher due to the delay between the comparator trip point and the NFET turning off. This delay allows the closed loop inductor current to ramp higher after the trip point by approximately 20ns × VIN/L (5) Specified by design. Not production tested. (6) The timeout period is a divided down representation of the 2MHz clock and thus the accuracy spec is the same as the switching frequency. 4 Submit Documentation Feedback Copyright © 2011–2013, Texas Instruments Incorporated Product Folder Links: LM3560 |
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