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LM2726M Scheda tecnica(PDF) 1 Page - Texas Instruments

Il numero della parte LM2726M
Spiegazioni elettronici  LM2725/LM2726 High Speed Synchronous MOSFET Drivers
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Produttore elettronici  TI1 [Texas Instruments]
Homepage  http://www.ti.com
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GND
8
LG
7
VCC
6
EN
5
PWM_IN
4
CBOOT
3
HG
2
SW
1
LM2725/ LM2726
+
+
0.1U
Vin (up to 35V)
Vout
1U
PWM
SIGNAL
L1
Q1
Q2
D1
C1
C2
10
+
5
Cin
Cout
U1
Note: for ultra low-frequency operation (such as
skip mode at light load), D1 should be a fast
recovery type diode instead of a Schottky.
LM2725, LM2726
www.ti.com
SNVS144D – NOVEMBER 2000 – REVISED MARCH 2013
LM2725/LM2726 High Speed Synchronous MOSFET Drivers
Check for Samples: LM2725, LM2726
1
FEATURES
DESCRIPTION
The LM2725/LM2726 is a family of dual MOSFET
2
High Peak Output Current
drivers that drive both the top MOSFET and bottom
Adaptive Shoot-Through Protection
MOSFET in a push-pull structure simultaneously. It
36V SW Pin Absolute Maximum Voltage
takes a logic level PWM input and splits it into two
complimentary signals with a typical 20ns dead time
Input Under-Voltage-Lock-Out
in between. The built-in shoot-through protection
Typical 20ns Internal Delay
circuitry prevents the top and bottom FETs from
Plastic 8-pin SOIC Package
turning on simultaneously. With a bias voltage of 5V,
the peak sourcing and sinking current for each driver
APPLICATIONS
of the LM2725 is about 1.2A and that of the LM2726
is about 3A. In an SOIC-8 package, each driver is
High Current DC/DC Power Supplies
able to handle 50mA average current. When EN
High Input Voltage Switching Regulators
signal is asserted the input UVLO (Under Voltage
Lock Out) ensures that all the driver outputs stay low
Microprocessors
until the supply rail exceeds the power-on threshold
during system power on, or after the supply rail drops
below power-on threshold by a specified hysteresis
during system power down. The cross-conduction
protection circuitry detects both the driver outputs and
will not turn on a driver until the other driver output is
low. The top gate bias voltage needed by the top
MOSFET can be obtained through an external
bootstrap structure. Minimum input pulse width is as
low as 55ns.
Typical Application
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Copyright © 2000–2013, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.


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