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CSD19531Q5AT Scheda tecnica(PDF) 1 Page - Texas Instruments |
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CSD19531Q5AT Scheda tecnica(HTML) 1 Page - Texas Instruments |
1 / 14 page 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate-to- Source Voltage (V) TC = 25°C,I D = 16A TC = 125°C,I D = 16A G001 0 1 2 3 4 5 6 7 8 9 10 0 4 8 12 16 20 24 28 32 36 40 Qg - Gate Charge (nC) ID = 16A VDS = 50V G001 1 D 2 D 3 D 4 D D 5 G 6 S 7 S 8 S P0093-01 Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD19531Q5A SLPS406B – SEPTEMBER 2013 – REVISED MAY 2014 CSD19531Q5A 100 V N-Channel NexFET™ Power MOSFETs 1 Features Product Summary 1 • Ultra-Low Qg and Qgd TA = 25°C TYPICAL VALUE UNIT • Low Thermal Resistance VDS Drain-to-Source Voltage 100 V • Avalanche Rated Qg Gate Charge Total (10 V) 37 nC Qgd Gate Charge Gate to Drain 6.6 nC • Pb-Free Terminal Plating VGS = 6 V 6.0 m Ω • RoHS Compliant RDS(on) Drain-to-Source On Resistance VGS = 10 V 5.3 m Ω • Halogen Free VGS(th) Threshold Voltage 2.7 V • SON 5 mm × 6 mm Plastic Package . 2 Applications Ordering Information • Primary Side Telecom Device Media Qty Package Ship CSD19531Q5A 13-Inch Reel 2500 • Secondary Side Synchronous Rectifier SON 5 x 6 mm Tape and Plastic Package Reel CSD19531Q5AT 7-Inch Reel 250 • Motor Control (1) For all available packages, see the orderable addendum at the end of the data sheet. 3 Description This 100 V, 5.3 m Ω, SON 5 mm × 6 mm NexFET™ Absolute Maximum Ratings power MOSFET is designed to minimize losses in TA = 25°C VALUE UNIT power conversion applications. VDS Drain-to-Source Voltage 100 V Top View VGS Gate-to-Source Voltage ±20 V Continuous Drain Current (Package limited) 100 Continuous Drain Current (Silicon limited), ID 110 A TC = 25°C Continuous Drain Current(1) 16 IDM Pulsed Drain Current(2) 337 A Power Dissipation(1) 3.3 PD W Power Dissipation, TC = 25°C 125 TJ, Operating Junction and –55 to 150 °C Tstg Storage Temperature Range Avalanche Energy, single pulse . EAS 180 mJ ID = 60 A, L = 0.1 mH, RG = 25 Ω . (1) Typical RθJA = 40°C/W on a 1-inch 2, 2-oz. Cu pad on a 0.06- inch thick FR4 PCB. (2) Max RθJC = 1.0°C/W, pulse duration ≤100 μs, duty cycle ≤1% RDS(on) vs VGS Gate Charge 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. |
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