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CSD18540Q5BT Scheda tecnica(PDF) 6 Page - Texas Instruments

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Il numero della parte CSD18540Q5BT
Spiegazioni elettronici  60V N-Channel NexFET Power MOSFETs
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Produttore elettronici  TI1 [Texas Instruments]
Homepage  http://www.ti.com
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CSD18540Q5BT Scheda tecnica(HTML) 6 Page - Texas Instruments

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TC - Case Temperature (°C)
-50
-25
0
25
50
75
100
125
150
175
200
0
20
40
60
80
100
120
D012
VDS - Drain-to-Source Voltage (V)
0.1
1
10
100
0.1
1
10
100
1000
5000
D010
100 ms
10 ms
1 ms
100 µs
10 µs
TAV - Time in Avalanche (ms)
0.01
0.1
1
10
100
D011
TC = 25q C
TC = 125q C
TC - Case Temperature (°C)
-75
-50
-25
0
25
50
75
100 125 150 175 200
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
D008
VGS = 4.5 V
VGS = 10 V
VSD - Source-to-Drain Voltage (V)
0
0.2
0.4
0.6
0.8
1
0.0001
0.001
0.01
0.1
1
10
100
D009
TC = 25°C
TC = 125°C
6
CSD18540Q5B
SLPS488A – JUNE 2014 – REVISED JUNE 2016
www.ti.com
Product Folder Links: CSD18540Q5B
Submit Documentation Feedback
Copyright © 2014–2016, Texas Instruments Incorporated
Typical MOSFET Characteristics (continued)
TA = 25°C (unless otherwise stated)
ID = 28 A
Figure 8. Normalized On-State Resistance vs Temperature
Figure 9. Typical Diode Forward Voltage
Single Pulse, Max RθJC = 0.8°C/W
Figure 10. Maximum Safe Operating Area
Figure 11. Single Pulse Unclamped Inductive Switching
Figure 12. Maximum Drain Current vs Temperature


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