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CSD18540Q5B Scheda tecnica(PDF) 1 Page - Texas Instruments |
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CSD18540Q5B Scheda tecnica(HTML) 1 Page - Texas Instruments |
1 / 13 page VGS - Gate-to-Source Voltage (V) 0 2 4 6 8 10 12 14 16 18 20 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 D007 TC = 25°C, I D = 28 A TC = 125°C, I D = 28 A Qg - Gate Charge (nC) 0 5 10 15 20 25 30 35 40 45 0 1 2 3 4 5 6 7 8 9 10 D004 ID = 28 A VDS = 30 V 1 D 2 D 3 D 4 D D 5 G 6 S 7 S 8 S P0093-01 Product Folder Sample & Buy Technical Documents Tools & Software Support & Community An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CSD18540Q5B SLPS488A – JUNE 2014 – REVISED JUNE 2016 CSD18540Q5B 60-V, N-Channel NexFET™ Power MOSFETs 1 1 Features 1 • Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package 2 Applications • DC-DC Conversion • Secondary Side Synchronous Rectifier • Isolated Converter Primary Side Switch • Motor Control 3 Description This 1.8-mΩ, 60-V NexFET™ power MOSFET is designed to minimize losses in power conversion applications with a SON 5-mm × 5-mm package. Top View Product Summary TA = 25°C TYPICAL VALUE UNIT VDS Drain-to-Source Voltage 60 V Qg Gate Charge Total (10 V) 41 nC Qgd Gate Charge Gate-to-Drain 6.7 nC RDS(on) Drain-to-Source On Resistance VGS = 4.5 V 2.6 m Ω VGS = 10 V 1.8 m Ω VGS(th) Threshold Voltage 1.9 V Ordering Information(1) DEVICE QTY MEDIA PACKAGE SHIP CSD18540Q5B 2500 13-Inch Reel SON 5.00-mm × 6.00-mm Plastic Package Tape and Reel CSD18540Q5BT 250 7-Inch Reel (1) For all available packages, see the orderable addendum at the end of the data sheet. Absolute Maximum Ratings TA = 25°C VALUE UNIT VDS Drain-to-Source Voltage 60 V VGS Gate-to-Source Voltage ±20 V ID Continuous Drain Current (Package Limited) 100 A Continuous Drain Current (Silicon Limited), TC = 25°C 205 Continuous Drain Current(1) 29 IDM Pulsed Drain Current, TA = 25°C (2) 400 A PD Power Dissipation(1) 3.8 W Power Dissipation, TC = 25°C 188 TJ, Tstg Operating Junction, Storage Temperature –55 to 175 °C EAS Avalanche Energy, Single Pulse ID = 80 A, L = 0.1 mH, RG = 25 Ω 320 mJ (1) Typical RθJA = 40°C/W on a 1-in 2, 2-oz Cu pad on a 0.06-in thick FR4 PCB. (2) Max RθJC = 0.8°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%. RDS(on) vs VGS Gate Charge |
Codice articolo simile - CSD18540Q5B_16 |
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Descrizione simile - CSD18540Q5B_16 |
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