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DAC7551IDRNRG4 Scheda tecnica(PDF) 2 Page - Texas Instruments |
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DAC7551IDRNRG4 Scheda tecnica(HTML) 2 Page - Texas Instruments |
2 / 22 page www.ti.com ABSOLUTE MAXIMUM RATINGS (1) DAC7551 SLAS441E – MARCH 2005 – REVISED APRIL 2007 This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. ORDERING INFORMATION(1) SPECIFIED PACKAGE TEMPERATURE PACKAGE PRODUCT PACKAGE-LEAD DESIGNATOR RANGE MARKING DAC7551 SON-12 DRN –40 °C to +105°C D51 (1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at www.ti.com. Over operating free-air temperature range (unless otherwise noted). UNIT VDD , IOVDD to GND –0.3V to 6V Digital input voltage to GND –0.3V to VDD + 0.3V VOUT to GND –0.3V to VDD + 0.3V Operating temperature range –40 °C to +105°C Storage temperature range –65 °C to +150°C Junction temperature (TJ Max) +150 °C Power dissipation (DRN) (TJ max – TA)/θJA Thermal impedance, θ JA 79 °C/W Thermal impedance, θ JC 48.57 °C/W Human body model (HBM) 4000V ESD rating Charged device model (CDM) 1500V (1) Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to absolute maximum conditions for extended periods may affect device reliability. 2 Submit Documentation Feedback |
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