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IRF647 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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IRF647 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel Mosfet Transistor IRF647 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 275 V VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 8A 0.34 Ω IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±500 nA IDSS Zero Gate Voltage Drain Current VDS= 275V; VGS=0 250 uA VSD Forward On-Voltage IS= 14A; VGS=0 1.8 V Ciss Input Capacitance VDS=25V,VGS=0V, F=1.0MHz 1600 pF Coss Output Capacitance 210 pF Crss Reverse Transfer Capacitance 95 pF ·SWITCHING CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT Td(on) Turn-on Delay Time VDD=125V,ID=14A RG=9.1Ω 16 24 ns Tr Rise Time 67 100 ns Td(off) Turn-off Delay Time 53 80 ns Tf Fall Time 49 74 ns PDF pdfFactory Pro www.fineprint.cn |
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