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IRF610 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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IRF610 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel Mosfet Transistor IRF610 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 200 V VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 1.6A 1.5 Ω IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±500 nA IDSS Zero Gate Voltage Drain Current VDS= 200V; VGS=0 250 uA VSD Forward On-Voltage IS= 3.3A; VGS=0 2.0 V Ciss Input Capacitance VDS=25V,VGS=0V, F=1.0MHz 200 pF Coss Output Capacitance 80 pF Crss Reverse Transfer Capacitance 25 pF ·SWITCHING CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT Td(on) Turn-on Delay Time VDD=100V,ID=3.3A VGS=10V,RGEN=24Ω RGS=24Ω 8 12 ns Tr Rise Time 17 26 ns Td(off) Turn-off Delay Time 13 21 ns Tf Fall Time 9 13 ns PDF pdfFactory Pro www.fineprint.cn |
Codice articolo simile - IRF610 |
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Descrizione simile - IRF610 |
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