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IRF610 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited

Il numero della parte IRF610
Spiegazioni elettronici  isc N-Channel MOSFET Transistor
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Produttore elettronici  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRF610 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
2
isc N-Channel Mosfet Transistor
IRF610
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
V(BR)DSS
Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
200
V
VGS(th)
Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
2
4
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID= 1.6A
1.5
Ω
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
±500
nA
IDSS
Zero Gate Voltage Drain Current
VDS= 200V; VGS=0
250
uA
VSD
Forward On-Voltage
IS= 3.3A; VGS=0
2.0
V
Ciss
Input Capacitance
VDS=25V,VGS=0V,
F=1.0MHz
200
pF
Coss
Output Capacitance
80
pF
Crss
Reverse Transfer Capacitance
25
pF
·SWITCHING CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
Td(on)
Turn-on Delay Time
VDD=100V,ID=3.3A
VGS=10V,RGEN=24Ω
RGS=24Ω
8
12
ns
Tr
Rise Time
17
26
ns
Td(off)
Turn-off Delay Time
13
21
ns
Tf
Fall Time
9
13
ns
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