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IRF256 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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IRF256 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor IRF256 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=250µA 275 V VGS(TH) Gate Threshold Voltage VDS= VGS; ID=250µA 2.0 4.0 V RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=12A 0.14 Ω IGSS Gate Source Leakage Current VGS=±20V;VDS=0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=275V; VGS=0 250 uA VSD Diode Forward Voltage IS=20A; VGS=0 1.8 V Ciss Input Capacitance VDS=25V; VGS=0V; fT=1MHz 2700 pF Crss Reverse Transfer Capacitance 130 Coss Output Capacitance 580 tr Rise Time ID=16A; VDD=95V; RL=4.7Ω 84 130 ns td(on) Turn-on Delay Time 19 29 tf Fall Time 65 98 td(off) Turn-off Delay Time 75 110 PDF pdfFactory Pro www.fineprint.cn |
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