Motore di ricerca datesheet componenti elettronici |
|
L6229PD Scheda tecnica(PDF) 8 Page - STMicroelectronics |
|
L6229PD Scheda tecnica(HTML) 8 Page - STMicroelectronics |
8 / 25 page L6229 8/25 3 CIRCUIT DESCRIPTION 3.1 POWER STAGES and CHARGE PUMP The L6229 integrates a Three-Phase Bridge, which consists of 6 Power MOSFETs connected as shown on the Block Diagram. Each Power MOS has an RDS(ON) = 0.73 Ω (typical value @25°C) with intrinsic fast freewheeling diode. Switching patterns are generated by the PWM Current Controller and the Hall Effect Sensor Decoding Logic (see relative paragraphs). Cross conduction protection is implemented by using a dead time (tDT = 1µs typical value) set by internal timing circuit between the turn off and turn on of two Power MOSFETs in one leg of a bridge. Pins VSA and VSB MUST be connected together to the supply voltage (VS). Using N-Channel Power MOS for the upper transistors in the bridge requires a gate drive voltage above the power supply voltage. The Bootstrapped Supply (VBOOT) is obtained through an internal oscillator and few ex- ternal components to realize a charge pump circuit as shown in Figure 6. The oscillator output (pin VCP) is a square wave at 600KHz (typically) with 10V amplitude. Recommended values/part numbers for the charge pump circuit are shown in Table 7. Table 7. Charge Pump External Component Values. Figure 6. Charge Pump Circuit 3.2 LOGIC INPUTS Pins FWD/REV, BRAKE, EN, H1, H2 and H3 are TTL/CMOS and µC compatible logic inputs. The internal struc- ture is shown in Figure 4. Typical value for turn-ON and turn-OFF thresholds are respectively Vth(ON) = 1.8V and Vth(OFF) = 1.3V. Pin EN (enable) may be used to implement Overcurrent and Thermal protection by connecting it to the open collector DIAG output If the protection and an external disable function are both desired, the appropriate connection must be implemented. When the external signal is from an open collector output, the circuit in Figure 8 can be used . For ex- ternal circuits that are push pull outputs the circuit in Figure 9 could be used. The resistor REN should be chosen in the range from 2.2K Ω to 180KΩ. Recommended values for REN and CEN are respectively 100KΩ and 5.6nF. More information for selecting the values can be found in the Overcurrent Protection section. CBOOT 220nF CP 10nF RP 100 Ω D1 1N4148 D2 1N4148 D2 CBOOT D1 RP CP VS VSA VCP VBOOT VSB D01IN1328 |
Codice articolo simile - L6229PD |
|
Descrizione simile - L6229PD |
|
|
Link URL |
Privacy Policy |
ALLDATASHEETIT.COM |
Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |