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IRL1004 Scheda tecnica(PDF) 1 Page - International Rectifier |
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IRL1004 Scheda tecnica(HTML) 1 Page - International Rectifier |
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1 / 8 page  IRL1004 HEXFET® Power MOSFET PD - 91702B S D G Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.75 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RqJA Junction-to-Ambient ––– 62 Thermal Resistance VDSS = 40V RDS(on) = 0.0065Ω ID = 130A l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Fifth Generation HEXFET® power MOSFETs from InternationalRectifierutilizeadvancedprocessingtechniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed andruggedizeddevicedesignthatHEXFETpowerMOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrialapplicationsatpowerdissipationlevels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Description 11/29/99 Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 130 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 92 A IDM Pulsed Drain Current 520 PD @TC = 25°C Power Dissipation 200 W Linear Derating Factor 1.3 W/°C VGS Gate-to-Source Voltage ± 16 V EAS Single Pulse Avalanche Energy 700 mJ IAR Avalanche Current 78 A EAR Repetitive Avalanche Energy 20 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case) °C Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m) Absolute Maximum Ratings www.irf.com 1 TO-220AB |
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